Investigation of 0.18μm CMOS Sensitivity to BTI and HCI Mechanisms under Extreme Thermal Stress Conditions
Idioma
EN
Communication dans un congrès
Este ítem está publicado en
2021 IEEE 30th Asian Test Symposium (ATS), 2021 IEEE 30th Asian Test Symposium (ATS), 2021-11-22, Matsuyama, Ehime. 2022-01-11p. 97-102
IEEE
Resumen
Bias temperature instability (BTI) and hot carrier injection (HCI) are both prominent reliability concerns for integrated circuits (ICs). In this paper, we investigated these failure mechanisms on 0.18μm CMOS (Complementary ...Leer más >
Bias temperature instability (BTI) and hot carrier injection (HCI) are both prominent reliability concerns for integrated circuits (ICs). In this paper, we investigated these failure mechanisms on 0.18μm CMOS (Complementary Metal-Oxide-Semiconductor) submitted to severe temperatures (150°C and 210°C) for long period of stress (up to 2,000 hours). Additionally, the transistors were applied dedicated stress conditions to activate the intrinsic HCI and BTI wear-out mechanisms. The aging laws were proposed based on these experimental results and implemented into the commercial software tool for further investigation at logic circuit level.< Leer menos
Palabras clave
Human computer interaction
Integrated circuits
Temperature sensors
Sensitivity
Software reliability
Transistors
Integrated circuit reliability
Reliability
Oilfield
0.18μm CMOS
Extreme temperature
DC characterization
HCI
BTI
Centros de investigación