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Development and characterizations of fine pitch flip-chip interconnection using silver sintering

hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
hal.structure.identifierCommissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information [CEA-LETI]
dc.contributor.authorGOUGEON, Julie
hal.structure.identifierCommissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information [CEA-LETI]
dc.contributor.authorFEAUTRIER, Céline
hal.structure.identifierCommissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information [CEA-LETI]
dc.contributor.authorSOURIAU, Jean-Charles
hal.structure.identifierCommissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information [CEA-LETI]
dc.contributor.authorFRANIATTE, Rémi
hal.structure.identifierCommissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information [CEA-LETI]
dc.contributor.authorDESCHASEAUX, Edouard
hal.structure.identifierCommissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information [CEA-LETI]
dc.contributor.authorMENDIZABAL, Laurent
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorTRÉGUER-DELAPIERRE, Mona
dc.contributor.editorAnne Vanhoestenberghe
dc.contributor.editorSteve Riches
dc.date.conference2023-09-11
dc.description.abstractEnFlip-chip interconnects made of silver are promising candidates to overcome the intrinsic limits of solderbased interconnects and match the demand for increased current densities of high-performance microprocessors. Dipbased interconnects have been demonstrated to be a promising approach to form electrical interconnects by sintering paste between copper pillars and pads. However, the quality of the process is limited by residual porosity and poor performances of the sintered joint formed between the pillar and the pad during sintering if a pressure > 50 MPa is not applied in order to decrease the final porosity. In this study, development has been focused on varying key dipping process parameters allowing a pressureless sintering process. Dip-transfer process was optimized on test vehicle and has shown electrical continuity over 700 interconnections with diameter down to 50 µm. We demonstrate high reliability of the process with microstructural observations, tomography X and thermal cycle up to 200 cycles without breakdown.
dc.language.isoen
dc.publisherIEEE
dc.subject.enpackaging
dc.subject.enflip-chip
dc.subject.ensilver sintering
dc.subject.enfine pitch
dc.subject.enlow temperature
dc.title.enDevelopment and characterizations of fine pitch flip-chip interconnection using silver sintering
dc.typeCommunication dans un congrès
dc.subject.halChimie/Matériaux
bordeaux.page1-4
bordeaux.conference.titleThe 24th European Microelectronics & Packaging Conference - EMPC23
bordeaux.countryGB
bordeaux.conference.cityHinxton
bordeaux.peerReviewedoui
hal.identifierhal-04280019
hal.version1
hal.invitednon
hal.proceedingsoui
hal.conference.organizerIEEE Electronics Packaging Society
hal.conference.end2023-09-14
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-04280019v1
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.spage=1-4&rft.epage=1-4&rft.au=GOUGEON,%20Julie&FEAUTRIER,%20C%C3%A9line&SOURIAU,%20Jean-Charles&FRANIATTE,%20R%C3%A9mi&DESCHASEAUX,%20Edouard&rft.genre=unknown


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