Investigating the degradation mechanisms of moisture on the reliability of integrated low-k stack
dc.rights.license | open | en_US |
hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
hal.structure.identifier | STMicroelectronics | |
dc.contributor.author | MISCHLER, Leo | |
hal.structure.identifier | STMicroelectronics | |
dc.contributor.author | CARTAILLER, Vivien | |
hal.structure.identifier | STMicroelectronics | |
dc.contributor.author | IMBERT, Gregory | |
hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
dc.contributor.author | DUCHAMP, Genevieve
IDREF: 033689849 | |
hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
dc.contributor.author | FREMONT, Helene
IDREF: 127007571 | |
dc.contributor.editor | LABAT, Nathalie | |
dc.contributor.editor | NOLHIER, Nicolas | |
dc.date.accessioned | 2023-11-07T08:48:05Z | |
dc.date.available | 2023-11-07T08:48:05Z | |
dc.date.issued | 2023-11-03 | |
dc.date.conference | 2023-10-02 | |
dc.identifier.issn | 0026-2714 | en_US |
dc.identifier.uri | oai:crossref.org:10.1016/j.microrel.2023.115087 | |
dc.identifier.uri | https://oskar-bordeaux.fr/handle/20.500.12278/184653 | |
dc.description.abstract | This study investigates the phenomenon of moisture diffusion within integrated circuits, focusing on low-k and SiCN dielectric materials. The research confirms the main pathway of moisture diffusion occurring through interfaces between materials. The various steps involved in the moisture diffusion mechanism are identified and linked to electrical characterizations, including variations in capacitance, modifications in leakage current behavior, and dielectric breakdown. A modification in the conduction mechanism is observed. The investigation also highlights different types of bonds formed between the dielectrics and moisture based on literature review and baking process. Saturated samples exhibit a partial reversibility after a 250 °C bake but do not fully recover. Nevertheless, reversibility is shown to be dependent on the moisture content reached prior to baking | |
dc.language.iso | EN | en_US |
dc.publisher | Elsevier BV | en_US |
dc.source | crossref | |
dc.title.en | Investigating the degradation mechanisms of moisture on the reliability of integrated low-k stack | |
dc.type | Communication dans un congrès | en_US |
dc.identifier.doi | 10.1016/j.microrel.2023.115087 | en_US |
dc.subject.hal | Sciences de l'ingénieur [physics] | en_US |
bordeaux.page | 115087 | en_US |
bordeaux.volume | 150 | en_US |
bordeaux.hal.laboratories | IMS : Laboratoire de l'Intégration du Matériau au Système - UMR 5218 | en_US |
bordeaux.institution | Université de Bordeaux | en_US |
bordeaux.institution | Bordeaux INP | en_US |
bordeaux.institution | CNRS | en_US |
bordeaux.conference.title | ESRF 2023 | en_US |
bordeaux.country | fr | en_US |
bordeaux.title.proceeding | Special issue of 34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2023 | en_US |
bordeaux.team | RELIABILITY-RIAD | en_US |
bordeaux.team | RELIABILITY-RIAD,WBG | en_US |
bordeaux.team | RELIABILITY-RIAD,REMI | en_US |
bordeaux.conference.city | TOULOUSE | en_US |
bordeaux.import.source | dissemin | |
hal.identifier | hal-04273097 | |
hal.version | 1 | |
hal.date.transferred | 2023-11-10T09:20:27Z | |
hal.invited | oui | en_US |
hal.proceedings | oui | en_US |
hal.conference.end | 2023-10-05 | |
hal.popular | non | en_US |
hal.audience | Internationale | en_US |
hal.export | true | |
workflow.import.source | dissemin | |
dc.rights.cc | Pas de Licence CC | en_US |
bordeaux.COinS | ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.date=2023-11-03&rft.volume=150&rft.spage=115087&rft.epage=115087&rft.eissn=0026-2714&rft.issn=0026-2714&rft.au=MISCHLER,%20Leo&CARTAILLER,%20Vivien&IMBERT,%20Gregory&DUCHAMP,%20Genevieve&FREMONT,%20Helene&rft.genre=unknown |
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