Gas Phase Deposition and Characterization of (Si)-B-C Ceramics
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EN
Communication dans un congrès
Ce document a été publié dans
216th ECS Meeting, 2009-10, Vienna. 2009, vol. 25, n° 8, p. 15-21
ECS
Résumé en anglais
B-C and Si-B-C coatings have been prepared by chemical vapour deposition (CVD) respectively from CH4/BCl3/H2 and MTS/BCl3/H2 precursor mixtures at low temperature (800-1050{degree sign}C) and reduced pressure (12kPa). The ...Lire la suite >
B-C and Si-B-C coatings have been prepared by chemical vapour deposition (CVD) respectively from CH4/BCl3/H2 and MTS/BCl3/H2 precursor mixtures at low temperature (800-1050{degree sign}C) and reduced pressure (12kPa). The kinetic laws (including apparent activation energy and reaction orders) related to the deposition process were determined within the regime controlled by chemical reactions. A wide range of coatings, prepared in various CVD conditions, were characterized in terms of morphology (SEM), structure (TEM, Raman spectroscopy) and elemental composition (Auger electron spectroscopy), in the as-deposited state and after heat treatment. A correlation between the various experimental approaches has supported a discussion on the chemical steps involved in the deposition process.< Réduire
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