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dc.rights.licenseopenen_US
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
hal.structure.identifierInstitut des Sciences Moléculaires [ISM]
dc.contributor.authorMOLENDA, Zuzanna
dc.contributor.authorPOLITI, Bastien
dc.contributor.authorCLERC, Raphaël
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorABBAS, Mamatimin
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorCHAMBON, Sylvain
IDREF: 113700431
hal.structure.identifierInstitut des Sciences Moléculaires [ISM]
dc.contributor.authorBASSANI, Dario M.
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorHIRSCH, Lionel
IDREF: 111272459
dc.date.accessioned2023-09-27T16:10:37Z
dc.date.available2023-09-27T16:10:37Z
dc.date.issued2023-07-06
dc.identifier.issn2051-6347en_US
dc.identifier.urioai:crossref.org:10.1039/d3mh00663h
dc.identifier.urihttps://oskar-bordeaux.fr/handle/20.500.12278/183822
dc.description.abstractEnElectrical doping of metal halide perovskites (MPHs) is a key step towards the use of this efficient and cost-effective semiconductor class in modern electronics. In this work, we demonstrate n-type doping of methylammonium lead iodide (CH3NH3PbI3) by the postfabrication introduction of Sm2+. The ionic radius of the latter is similar to that of Pb2+ and can replace it without altering the perovskite crystal lattice. It s demonstrated that once incorporated, Sm2+ can act as a dopant by undergoing oxidation to Sm3+. This results in the release of a negative charge that n-dopes the material, resulting in an increase of conductivity of almost 3 orders of magnitude. Unlike substitution doping with heterovalent ions, furtive dopants do not require counterions to maintain charge neutrality with respect to the ions they replace and are thus more likely to be incorporated into the crystalline structure. The incorporation of the dopant throughout the material is evidenced by XPS and ToF-SIMS, while the XRD pattern shows no phase separation at low andmedium doping concentrations. A shift of the Fermi level towards a conduction energy of 0.52 eV confirms the doping to be n-type with a charge carrier density, calculated using the Mott–Schottky method, estimated to be nearly 1017 cm 3 for the most conductive samples. Variable-temperature conductivity experiments show that the dopant is only partially ionized at room temperature due to dopant freeze-out.
dc.description.sponsorshipInterfaces management of HYbrid PERovskite based SOlar cells - ANR-18-CE05-0021en_US
dc.language.isoENen_US
dc.rightsAttribution-NonCommercial 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc/3.0/us/*
dc.sourcecrossref
dc.title.enRedox-active ions unlock substitutional doping in halide perovskites
dc.title.alternativeMater. Horiz.en_US
dc.typeArticle de revueen_US
dc.identifier.doi10.1039/d3mh00663hen_US
dc.subject.halSciences de l'ingénieur [physics]en_US
bordeaux.journalMaterials Horizonsen_US
bordeaux.page2845-2853en_US
bordeaux.volume10en_US
bordeaux.hal.laboratoriesIMS : Laboratoire de l'Intégration du Matériau au Système - UMR 5218en_US
bordeaux.hal.laboratoriesInstitut des Sciences Moléculaires (ISM) - UMR 5255en_US
bordeaux.issue8en_US
bordeaux.institutionUniversité de Bordeauxen_US
bordeaux.institutionBordeaux INPen_US
bordeaux.institutionCNRSen_US
bordeaux.peerReviewedouien_US
bordeaux.inpressnonen_US
bordeaux.identifier.funderIDConseil Régional Aquitaineen_US
bordeaux.import.sourcedissemin
hal.identifierhal-04220325
hal.version1
hal.date.transferred2023-09-27T16:10:41Z
hal.popularnonen_US
hal.audienceInternationaleen_US
hal.exporttrue
workflow.import.sourcedissemin
dc.rights.ccCC BY-NCen_US
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Materials%20Horizons&rft.date=2023-07-06&rft.volume=10&rft.issue=8&rft.spage=2845-2853&rft.epage=2845-2853&rft.eissn=2051-6347&rft.issn=2051-6347&rft.au=MOLENDA,%20Zuzanna&POLITI,%20Bastien&CLERC,%20Rapha%C3%ABl&ABBAS,%20Mamatimin&CHAMBON,%20Sylvain&rft.genre=article


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