Temperature-Dependent Thermal Conductivity and Interfacial Resistance of Ge-Rich Ge2Sb2Te5 Films and Multilayers
| dc.rights.license | open | en_US |
| hal.structure.identifier | Institut de Mécanique et d'Ingénierie [I2M] | |
| dc.contributor.author | KUSIAK, Andrzej | |
| hal.structure.identifier | Institut de Mécanique et d'Ingénierie [I2M] | |
| dc.contributor.author | CHASSAIN, Clément | |
| hal.structure.identifier | Institut de Mécanique et d'Ingénierie [I2M] | |
| dc.contributor.author | CANSECO, Alejandro Mateos | |
| hal.structure.identifier | Institut de Mécanique et d'Ingénierie [I2M] | |
| dc.contributor.author | GHOSH, Kanka | |
| dc.contributor.author | CYRILLE, Marie-Claire | |
| dc.contributor.author | SERRA, Anna Lisa | |
| dc.contributor.author | NAVARRO, Gabriele | |
| dc.contributor.author | BERNARD, Mathieu | |
| dc.contributor.author | TRAN, Nguyet-Phuong | |
| hal.structure.identifier | Institut de Mécanique et d'Ingénierie [I2M] | |
| dc.contributor.author | BATTAGLIA, Jean-Luc
IDREF: 084712562 | |
| dc.date.accessioned | 2023-03-20T09:36:33Z | |
| dc.date.available | 2023-03-20T09:36:33Z | |
| dc.date.issued | 2022-01-08 | |
| dc.identifier.issn | 1862-6270 | en_US |
| dc.identifier.uri | https://oskar-bordeaux.fr/handle/20.500.12278/172368 | |
| dc.description.abstractEn | This article reports on the thermal characterization of Ge-rich Ge2Sb2Te5 films and Ge2Sb2Te5/Ge-rich Ge2Sb2Te5 multilayers designed for high-temperature applications in the field of phase-change memory. The thermal conductivities of such materials and the thermal boundary resistance with the Si3N4 dielectric material are characterized by two different photothermal techniques. The phase change in Ge-rich Ge2Sb2Te5 is found to occur at a temperature higher than that of the Ge2Sb2Te5 alloy. The Ge2Sb2Te5/Ge rich Ge2Sb2Te5 multilayer has been observed to feature two phase changes corresponding to Ge-rich Ge2Sb2Te5 and Ge2Sb2Te5. Finally, it is estimated that the thermal resistance of the interface separating Ge-rich Ge2Sb2Te5 and Ge2Sb2Te5 nanolayers constitutes the multilayer structure and its contribution has been realized to be significant in enhancing the thermal resistance of the multilayer structure. | |
| dc.language.iso | EN | en_US |
| dc.subject.en | Chalcogenide alloys | |
| dc.subject.en | Multilayers | |
| dc.subject.en | Phase-change materials | |
| dc.subject.en | Photothermal radiometry | |
| dc.subject.en | Thermal properties | |
| dc.title.en | Temperature-Dependent Thermal Conductivity and Interfacial Resistance of Ge-Rich Ge2Sb2Te5 Films and Multilayers | |
| dc.type | Article de revue | en_US |
| dc.identifier.doi | 10.1002/pssr.202100507 | en_US |
| dc.subject.hal | Sciences de l'ingénieur [physics]/Matériaux | en_US |
| bordeaux.journal | physica status solidi (RRL) – Rapid Research Letters | en_US |
| bordeaux.volume | 16 | en_US |
| bordeaux.hal.laboratories | Institut de Mécanique et d’Ingénierie de Bordeaux (I2M) - UMR 5295 | en_US |
| bordeaux.issue | 4 | en_US |
| bordeaux.institution | Université de Bordeaux | en_US |
| bordeaux.institution | Bordeaux INP | en_US |
| bordeaux.institution | CNRS | en_US |
| bordeaux.institution | INRAE | en_US |
| bordeaux.institution | Arts et Métiers | en_US |
| bordeaux.peerReviewed | oui | en_US |
| bordeaux.inpress | non | en_US |
| bordeaux.identifier.funderID | Horizon 2020 | en_US |
| hal.export | false | |
| dc.rights.cc | Pas de Licence CC | en_US |
| bordeaux.COinS | ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=physica%20status%20solidi%20(RRL)%20%E2%80%93%20Rapid%20Research%20Letters&rft.date=2022-01-08&rft.volume=16&rft.issue=4&rft.eissn=1862-6270&rft.issn=1862-6270&rft.au=KUSIAK,%20Andrzej&CHASSAIN,%20Cl%C3%A9ment&CANSECO,%20Alejandro%20Mateos&GHOSH,%20Kanka&CYRILLE,%20Marie-Claire&rft.genre=article |
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