A 24-31GHz 28nm FD-SOI CMOS Balanced Power Amplifier Robust to 3:1 VSWR for 5G Application
| dc.rights.license | open | en_US |
| hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
| dc.contributor.author | DIVERREZ, Gwennael | |
| hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
| dc.contributor.author | KERHERVE, Eric | |
| hal.structure.identifier | STMicroelectronics [Crolles] [ST-CROLLES] | |
| dc.contributor.author | CATHELIN, Andreia | |
| dc.date.accessioned | 2023-02-28T09:42:52Z | |
| dc.date.available | 2023-02-28T09:42:52Z | |
| dc.date.issued | 2022-10-31 | |
| dc.date.conference | 2022-09-27 | |
| dc.identifier.isbn | 978-2-8748-7069-9 | |
| dc.identifier.uri | https://oskar-bordeaux.fr/handle/20.500.12278/172118 | |
| dc.description.abstractEn | This paper presents a broadband balanced power amplifier (PA) for 5G mm-wave applications. Thanks to its balanced architecture, the PA exhibits a great robustness to active voltage standing wave ratio (VSWR). The design of the power cells is focused on high efficiency while maintaining high linearity. The PA exhibits 20.5dBm P sat with 39% peak power added efficiency (PAE) at 26GHz. In the n257 and n258 5G New Radio (NR) FR2 bands (24.25 - 29.50GHz), PAE rnax and PAE 6dBPBO of the PA remain above 30% and 14%, respectively. At 29 GHz, the PAE and Psat drop by only 3% and 0.8 dBm, respectively, between the optimal case 50 Ω and the worst case at 2:1 VSWR. The PA is implemented in a 28nm FD-SOI CMOS process and occupies 0.90mm2. | |
| dc.language.iso | EN | en_US |
| dc.publisher | IEEE | en_US |
| dc.subject.en | Integrated circuit | |
| dc.subject.en | Balanced power amplifier | |
| dc.subject.en | VSWR | |
| dc.subject.en | 5G | |
| dc.subject.en | CMOS | |
| dc.subject.en | 28nm FD-SOI | |
| dc.subject.en | Ballast resistor | |
| dc.title.en | A 24-31GHz 28nm FD-SOI CMOS Balanced Power Amplifier Robust to 3:1 VSWR for 5G Application | |
| dc.type | Communication dans un congrès avec actes | en_US |
| dc.identifier.doi | 10.23919/EuMC54642.2022.9924331 | en_US |
| dc.subject.hal | Sciences de l'ingénieur [physics]/Electronique | en_US |
| bordeaux.page | 496-499 | en_US |
| bordeaux.hal.laboratories | IMS : Laboratoire de l'Intégration du Matériau au Système - UMR 5218 | en_US |
| bordeaux.institution | Université de Bordeaux | en_US |
| bordeaux.institution | Bordeaux INP | en_US |
| bordeaux.institution | CNRS | en_US |
| bordeaux.conference.title | 2022 52nd European Microwave Conference (EuMC) | en_US |
| bordeaux.country | it | en_US |
| bordeaux.title.proceeding | 2022 52nd European Microwave Conference (EuMC) | en_US |
| bordeaux.conference.city | Milan | en_US |
| bordeaux.peerReviewed | oui | en_US |
| bordeaux.import.source | hal | |
| hal.identifier | hal-03867425 | |
| hal.version | 1 | |
| hal.export | false | |
| workflow.import.source | hal | |
| dc.rights.cc | Pas de Licence CC | en_US |
| bordeaux.COinS | ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.date=2022-10-31&rft.spage=496-499&rft.epage=496-499&rft.au=DIVERREZ,%20Gwennael&KERHERVE,%20Eric&CATHELIN,%20Andreia&rft.isbn=978-2-8748-7069-9&rft.genre=proceeding |
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