Optimizing Finger Spacing in Multi-Finger Bipolar Transistors for Minimal Electrothermal Coupling
| dc.rights.license | open | en_US |
| dc.contributor.author | GUPTA, Aakashdeep | |
| dc.contributor.author | NIDHIN, K. | |
| dc.contributor.author | BALANETHIRAM, Suresh | |
| dc.contributor.author | YADAV, Shon | |
| hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
| dc.contributor.author | FREGONESE, Sebastien | |
| hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
| dc.contributor.author | ZIMMER, Thomas
IDREF: 076632598 | |
| dc.contributor.author | CHAKRAVORTY, Anjan | |
| dc.date.accessioned | 2023-02-27T10:54:52Z | |
| dc.date.available | 2023-02-27T10:54:52Z | |
| dc.date.issued | 2022-10-28 | |
| dc.identifier.issn | 0018-9383, 1557-9646 | en_US |
| dc.identifier.uri | https://oskar-bordeaux.fr/handle/20.500.12278/172102 | |
| dc.description.abstractEn | We present a compact modeling framework to optimize finger spacing for improving the thermal stability in multi-finger bipolar transistors with shallow-trench isolation. First, we present an accurate physics-based model for total junction temperature in all the fingers of a transistor. Other than validating the model with 3D TCAD simulations and measured data, we demonstrate its efficacy to achieve finger spacing optimization with the aid of an iterative algorithm. Since the proposed technique is scalable from the viewpoint of the number of fingers within a transistor and their geometries, the proposed framework is found to work seamlessly for various emitter finger numbers. | |
| dc.language.iso | EN | en_US |
| dc.subject.en | SiGe HBT | |
| dc.subject.en | multi-finger transistor | |
| dc.subject.en | finger placement | |
| dc.subject.en | self-heating | |
| dc.subject.en | thermal coupling | |
| dc.subject.en | shallow trench isolation | |
| dc.subject.en | Kirchhoff's transformation | |
| dc.title.en | Optimizing Finger Spacing in Multi-Finger Bipolar Transistors for Minimal Electrothermal Coupling | |
| dc.type | Article de revue | en_US |
| dc.identifier.doi | 10.1109/TED.2022.3215801 | en_US |
| dc.subject.hal | Sciences de l'ingénieur [physics] | en_US |
| bordeaux.journal | IEEE Transactions on Electron Devices | en_US |
| bordeaux.page | 6535-6540 | en_US |
| bordeaux.volume | 69 | en_US |
| bordeaux.hal.laboratories | IMS : Laboratoire de l'Intégration du Matériau au Système - UMR 5218 | en_US |
| bordeaux.issue | 12 | en_US |
| bordeaux.institution | Université de Bordeaux | en_US |
| bordeaux.institution | Bordeaux INP | en_US |
| bordeaux.institution | CNRS | en_US |
| bordeaux.peerReviewed | oui | en_US |
| bordeaux.inpress | non | en_US |
| bordeaux.import.source | hal | |
| hal.identifier | hal-03846331 | |
| hal.version | 1 | |
| hal.export | false | |
| workflow.import.source | hal | |
| dc.rights.cc | Pas de Licence CC | en_US |
| bordeaux.COinS | ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=IEEE%20Transactions%20on%20Electron%20Devices&rft.date=2022-10-28&rft.volume=69&rft.issue=12&rft.spage=6535-6540&rft.epage=6535-6540&rft.eissn=0018-9383,%201557-9646&rft.issn=0018-9383,%201557-9646&rft.au=GUPTA,%20Aakashdeep&NIDHIN,%20K.&BALANETHIRAM,%20Suresh&YADAV,%20Shon&FREGONESE,%20Sebastien&rft.genre=article |
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