Optimizing Finger Spacing in Multi-Finger Bipolar Transistors for Minimal Electrothermal Coupling
Language
EN
Article de revue
This item was published in
IEEE Transactions on Electron Devices. 2022-10-28, vol. 69, n° 12, p. 6535-6540
English Abstract
We present a compact modeling framework to optimize finger spacing for improving the thermal stability in multi-finger bipolar transistors with shallow-trench isolation. First, we present an accurate physics-based model ...Read more >
We present a compact modeling framework to optimize finger spacing for improving the thermal stability in multi-finger bipolar transistors with shallow-trench isolation. First, we present an accurate physics-based model for total junction temperature in all the fingers of a transistor. Other than validating the model with 3D TCAD simulations and measured data, we demonstrate its efficacy to achieve finger spacing optimization with the aid of an iterative algorithm. Since the proposed technique is scalable from the viewpoint of the number of fingers within a transistor and their geometries, the proposed framework is found to work seamlessly for various emitter finger numbers.Read less <
English Keywords
SiGe HBT
multi-finger transistor
finger placement
self-heating
thermal coupling
shallow trench isolation
Kirchhoff's transformation