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dc.rights.licenseopenen_US
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorLECOCQ, Tristan
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorKERHERVE, Eric
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorPHAM, Jean-Marie
IDREF: 148109985
dc.date.accessioned2023-02-27T08:56:50Z
dc.date.available2023-02-27T08:56:50Z
dc.date.issued2022-08-05
dc.date.conference2022-06-19
dc.identifier.isbn978-1-6654-0105-0
dc.identifier.urihttps://oskar-bordeaux.fr/handle/20.500.12278/172095
dc.description.abstractEnThis paper presents a Doherty power amplifier with an enhanced power back-off efficiency and a high linearity using an adaptive bias circuit. The silicon area reduction is achieved with an active balun driver topology. The operating frequency range is 1.49GHz to 2.17GHz for NB-IoT applications. The post layout simulations (PLS) show a maximum output power of 31.6dBm with a peak PAE of 35.3% at 1.85GHz. The efficiency drops to 28% at 6dB back-off. The robustness to the 2:1 SWR achieves a variation in Gain and P sat of 3dB and 0.8dB, respectively.
dc.language.isoENen_US
dc.publisherIEEEen_US
dc.subject.enAntenna measurements
dc.subject.enPower transmission lines
dc.subject.enPower measurement
dc.subject.enBaluns
dc.subject.enPower amplifiers
dc.subject.enLinearity
dc.subject.enTransmission line measurements
dc.subject.enPower amplifier
dc.subject.enActive balun
dc.subject.enDoherty
dc.subject.enEfficiency enhancement
dc.subject.enHigh linear
dc.subject.enAdaptive biasing
dc.subject.en5G
dc.subject.enNB-IoT
dc.title.enNB-IoT High Linear Doherty Amplifier with Active Balun
dc.typeCommunication dans un congrès avec actesen_US
dc.identifier.doi10.1109/NEWCAS52662.2022.9842261en_US
dc.subject.halSciences de l'ingénieur [physics]/Electroniqueen_US
bordeaux.page89-93en_US
bordeaux.hal.laboratoriesIMS : Laboratoire d’Intégration du Matériau au Système - UMR 5218en_US
bordeaux.institutionUniversité de Bordeauxen_US
bordeaux.institutionBordeaux INPen_US
bordeaux.institutionCNRSen_US
bordeaux.conference.title2022 20th IEEE Interregional NEWCAS Conference (NEWCAS)en_US
bordeaux.countrycaen_US
bordeaux.title.proceeding2022 20th IEEE Interregional NEWCAS Conference (NEWCAS)en_US
bordeaux.conference.cityQuebec Cityen_US
bordeaux.peerReviewedouien_US
bordeaux.import.sourcehal
hal.identifierhal-03811887
hal.version1
hal.exportfalse
workflow.import.sourcehal
dc.rights.ccPas de Licence CCen_US
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.date=2022-08-05&rft.spage=89-93&rft.epage=89-93&rft.au=LECOCQ,%20Tristan&KERHERVE,%20Eric&PHAM,%20Jean-Marie&rft.isbn=978-1-6654-0105-0&rft.genre=proceeding


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