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NB-IoT High Linear Doherty Amplifier with Active Balun
dc.rights.license | open | en_US |
hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
dc.contributor.author | LECOCQ, Tristan | |
hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
dc.contributor.author | KERHERVE, Eric | |
hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
dc.contributor.author | PHAM, Jean-Marie
IDREF: 148109985 | |
dc.date.accessioned | 2023-02-27T08:56:50Z | |
dc.date.available | 2023-02-27T08:56:50Z | |
dc.date.issued | 2022-08-05 | |
dc.date.conference | 2022-06-19 | |
dc.identifier.isbn | 978-1-6654-0105-0 | |
dc.identifier.uri | https://oskar-bordeaux.fr/handle/20.500.12278/172095 | |
dc.description.abstractEn | This paper presents a Doherty power amplifier with an enhanced power back-off efficiency and a high linearity using an adaptive bias circuit. The silicon area reduction is achieved with an active balun driver topology. The operating frequency range is 1.49GHz to 2.17GHz for NB-IoT applications. The post layout simulations (PLS) show a maximum output power of 31.6dBm with a peak PAE of 35.3% at 1.85GHz. The efficiency drops to 28% at 6dB back-off. The robustness to the 2:1 SWR achieves a variation in Gain and P sat of 3dB and 0.8dB, respectively. | |
dc.language.iso | EN | en_US |
dc.publisher | IEEE | en_US |
dc.subject.en | Antenna measurements | |
dc.subject.en | Power transmission lines | |
dc.subject.en | Power measurement | |
dc.subject.en | Baluns | |
dc.subject.en | Power amplifiers | |
dc.subject.en | Linearity | |
dc.subject.en | Transmission line measurements | |
dc.subject.en | Power amplifier | |
dc.subject.en | Active balun | |
dc.subject.en | Doherty | |
dc.subject.en | Efficiency enhancement | |
dc.subject.en | High linear | |
dc.subject.en | Adaptive biasing | |
dc.subject.en | 5G | |
dc.subject.en | NB-IoT | |
dc.title.en | NB-IoT High Linear Doherty Amplifier with Active Balun | |
dc.type | Communication dans un congrès avec actes | en_US |
dc.identifier.doi | 10.1109/NEWCAS52662.2022.9842261 | en_US |
dc.subject.hal | Sciences de l'ingénieur [physics]/Electronique | en_US |
bordeaux.page | 89-93 | en_US |
bordeaux.hal.laboratories | IMS : Laboratoire d’Intégration du Matériau au Système - UMR 5218 | en_US |
bordeaux.institution | Université de Bordeaux | en_US |
bordeaux.institution | Bordeaux INP | en_US |
bordeaux.institution | CNRS | en_US |
bordeaux.conference.title | 2022 20th IEEE Interregional NEWCAS Conference (NEWCAS) | en_US |
bordeaux.country | ca | en_US |
bordeaux.title.proceeding | 2022 20th IEEE Interregional NEWCAS Conference (NEWCAS) | en_US |
bordeaux.conference.city | Quebec City | en_US |
bordeaux.peerReviewed | oui | en_US |
bordeaux.import.source | hal | |
hal.identifier | hal-03811887 | |
hal.version | 1 | |
hal.export | false | |
workflow.import.source | hal | |
dc.rights.cc | Pas de Licence CC | en_US |
bordeaux.COinS | ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.date=2022-08-05&rft.spage=89-93&rft.epage=89-93&rft.au=LECOCQ,%20Tristan&KERHERVE,%20Eric&PHAM,%20Jean-Marie&rft.isbn=978-1-6654-0105-0&rft.genre=proceeding |
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