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dc.rights.licenseopenen_US
dc.contributor.authorBEDEL-PEREIRA, Eléna
dc.contributor.authorBASSALER, Julien
dc.contributor.authorLAVAL, Hugo
dc.contributor.authorHOLEC, J
dc.contributor.authorMONFLIER, Richard
dc.contributor.authorMESNILGRENTE, Fabien
dc.contributor.authorSALVAGNAC, Ludovic
dc.contributor.authorDARAN, Emmanuelle
dc.contributor.authorDUPLOYER, B
dc.contributor.authorTENAILLEAU, C
dc.contributor.authorGOURDON, A
hal.structure.identifierCentre de Recherche Paul Pascal [CRPP]
dc.contributor.authorJANCARIK, A
dc.contributor.authorSÉGUY, Isabelle
dc.date.accessioned2022-12-02T09:13:17Z
dc.date.available2022-12-02T09:13:17Z
dc.date.issued2022-01
dc.identifier.issn2046-2069en_US
dc.identifier.urihttps://oskar-bordeaux.fr/handle/20.500.12278/170449
dc.description.abstractEnOligoacenes are promising materials in the field of electronic devices since they exhibit high charge carrier mobility and more particularly as a semiconductor in thin film transistors. Herein, we investigate the field effect charge carrier mobility of benzohexacene, recently obtained by cheletropic decarbonylation at moderate temperature. Initially, high performance bottom contact organic thin-film transistors (OTFTs) were fabricated using tetracene to validate the fabrication process. For easier comparison, the geometries and channel sizes of the fabricated devices are the same for the two acenes. The charge transport in OTFTs being closely related to the organic thin film at the dielectric/organic semiconductor interface, the structural and morphological features of the thin films of both materials are therefore studied according to deposition conditions. Finally, by extracting relevant device parameters the benzohexacene based OTFT shows a fou1 .r-probe contact-corrected hole mobility value of up to 0.2 cm2V−1 s−1
dc.language.isoENen_US
dc.rightsAttribution-NonCommercial 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc/3.0/us/*
dc.title.enBenzohexacene guide in accurate determination of field effect carrier mobilities in long acenes
dc.title.alternativeRSC Adv.en_US
dc.typeArticle de revueen_US
dc.identifier.doi10.1039/d1ra07808aen_US
dc.subject.halPhysique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]en_US
dc.subject.halSciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectroniqueen_US
bordeaux.journalRSC Advancesen_US
bordeaux.page671 - 680en_US
bordeaux.volume12en_US
bordeaux.hal.laboratoriesCentre de Recherche Paul Pascal (CRPP) - UMR 5031en_US
bordeaux.issue2en_US
bordeaux.institutionUniversité de Bordeauxen_US
bordeaux.institutionCNRSen_US
bordeaux.teamMéta-atomes, métamatériaux, métasurfaces (META)en_US
bordeaux.peerReviewedouien_US
bordeaux.inpressnonen_US
bordeaux.import.sourcehal
hal.identifierhal-03529654
hal.version1
hal.exportfalse
workflow.import.sourcehal
dc.rights.ccCC BY-NCen_US
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=RSC%20Advances&rft.date=2022-01&rft.volume=12&rft.issue=2&rft.spage=671%20-%20680&rft.epage=671%20-%20680&rft.eissn=2046-2069&rft.issn=2046-2069&rft.au=BEDEL-PEREIRA,%20El%C3%A9na&BASSALER,%20Julien&LAVAL,%20Hugo&HOLEC,%20J&MONFLIER,%20Richard&rft.genre=article


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