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hal.structure.identifierCentre de physique moléculaire optique et hertzienne [CPMOH]
dc.contributor.authorPERNOT, Gilles
hal.structure.identifierInstitute for Integrative Nanosciences
dc.contributor.authorSTOFFEL, M.
hal.structure.identifierLaboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux [LITEN]
dc.contributor.authorSAVIC, I.
hal.structure.identifierInstitute for Integrative Nanosciences
dc.contributor.authorPEZZOLI, F.
hal.structure.identifierInstitute for Integrative Nanosciences
dc.contributor.authorCHEN, P.
hal.structure.identifierLaboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux [LITEN]
dc.contributor.authorSAVELLI, Guillaume
hal.structure.identifierFraunhofer Institute for Physical Measurement Techniques [Fraunhofer IPM]
dc.contributor.authorJACQUOT, A.
hal.structure.identifierInstitute for Integrative Nanosciences
dc.contributor.authorSCHUMANN, J.
hal.structure.identifierMax-Planck-Institut für Festkörperforschung
dc.contributor.authorDENKER, U.
hal.structure.identifierInstitute for Integrative Nanosciences
dc.contributor.authorMÖNCH, I.
hal.structure.identifierInstitute for Integrative Nanosciences
dc.contributor.authorDENEKE, Ch.
hal.structure.identifierInstitute for Integrative Nanosciences
dc.contributor.authorSCHMIDT, O. G.
hal.structure.identifierCentre de physique moléculaire optique et hertzienne [CPMOH]
dc.contributor.authorRAMPNOUX, Jean-Michel
hal.structure.identifierLaboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux [LITEN]
dc.contributor.authorWANG, S.
hal.structure.identifierLaboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux [LITEN]
dc.contributor.authorPLISSONNIER, M.
hal.structure.identifierInstitute for Integrative Nanosciences
dc.contributor.authorRASTELLI, A.
hal.structure.identifierCentre de physique moléculaire optique et hertzienne [CPMOH]
dc.contributor.authorDILHAIRE, Stefan
hal.structure.identifierLaboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux [LITEN]
dc.contributor.authorMINGO, Natalio
dc.date.created2009-05-05
dc.date.issued2010
dc.identifier.issn1476-1122
dc.description.abstractEnThe ability to precisely control the thermal conductivity (κ) of a material is fundamental in the development of on-chip heat management or energy conversion applications. Nanostructuring permits a marked reduction of κ of single-crystalline materials, as recently demonstrated for silicon nanowires. However, silicon-based nanostructured materials with extremely low κ are not limited to nanowires. By engineering a set of individual phonon-scattering nanodot barriers we have accurately tailored the thermal conductivity of a single-crystalline SiGe material in spatially defined regions as short as ∼15 nm. Single-barrier thermal resistances between 2 and 4×10−9 m2 K W−1 were attained, resulting in a room-temperature κ down to about 0.9 W m−1 K−1, in multilayered structures with as little as five barriers. Such low thermal conductivity is compatible with a totally diffuse mismatch model for the barriers, and it is well below the amorphous limit. The results are in agreement with atomistic Green’s function simulations.
dc.description.sponsorshipTHermoelectric MAterial for Energie Scavenging Power Expanding
dc.language.isoen
dc.publisherNature Publishing Group
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/
dc.subject.enThermal conductivity
dc.subject.enHeterodyne Pump-probe Thermoreflectance
dc.subject.enBallistic Heat Conduction
dc.subject.enNanoparticles
dc.title.enPrecise control of thermal conductivity at the nanoscale through individual phonon-scattering barriers
dc.typeArticle de revue
dc.identifier.doi10.1038/NMAT2752
dc.subject.halPhysique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]
bordeaux.journalNature Materials
bordeaux.page491-495
bordeaux.volume9
bordeaux.issue6
bordeaux.peerReviewedoui
hal.identifierhal-00505811
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00505811v1
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