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hal.structure.identifierDepartment of Electronic Engineering
dc.contributor.authorALTET, J.
hal.structure.identifierDepartment of Electronic Engineering
dc.contributor.authorRUBIO, A.
hal.structure.identifierCentre de physique moléculaire optique et hertzienne [CPMOH]
dc.contributor.authorSCHAUB, Emmanuel
hal.structure.identifierCentre de physique moléculaire optique et hertzienne [CPMOH]
dc.contributor.authorDILHAIRE, S.
hal.structure.identifierCentre de physique moléculaire optique et hertzienne [CPMOH]
dc.contributor.authorCLAEYS, W.
dc.date.issued2001-01
dc.identifier.issn0018-9200
dc.description.abstractEnThe power dissipated by the devices of a circuit can be construed as a signature of the circuit's performance and state. Without disturbing the circuit operation, this power consumption can be monitored by temperature measurements of the silicon die surface via built-in differential temperature sensors. In this paper, dynamic and spatial thermal behavioral characterization of VLSI MOS devices is presented using laser thermoreflectance measurements and on-chip differential temperature sensing circuits. A discussion of the application of built-in differential temperature measurements as an IC test strategy is also presented.
dc.language.isoen
dc.publisherInstitute of Electrical and Electronics Engineers
dc.title.enThermal coupling in integrated circuits: Application to thermal testing
dc.typeArticle de revue
dc.identifier.doi10.1109/4.896232
dc.subject.halPhysique [physics]
bordeaux.journalIEEE Journal of Solid-State Circuits
bordeaux.page81-91
bordeaux.volume36
bordeaux.issue1
bordeaux.peerReviewedoui
hal.identifierhal-01550679
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-01550679v1
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