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hal.structure.identifierAmplitude Systèmes
hal.structure.identifierLaboratoire Ondes et Matière d'Aquitaine [LOMA]
dc.contributor.authorD'ACREMONT, Quentin
hal.structure.identifierLaboratoire d'Energétique et Mécanique Théorique et Appliquée [LEMTA ]
dc.contributor.authorPERNOT, Gilles
hal.structure.identifierLaboratoire Ondes et Matière d'Aquitaine [LOMA]
dc.contributor.authorRAMPNOUX, Jean-Michel
hal.structure.identifierInstitute for Materials
dc.contributor.authorFURLAN, Andrej
hal.structure.identifierLaboratoire d'Energétique et Mécanique Théorique et Appliquée [LEMTA ]
dc.contributor.authorLACROIX, David
hal.structure.identifierInstitute for Materials
dc.contributor.authorLUDWIG, Alfred
hal.structure.identifierLaboratoire Ondes et Matière d'Aquitaine [LOMA]
dc.contributor.authorDILHAIRE, Stefan
dc.date.created2017-01-18
dc.date.issued2017
dc.identifier.issn0034-6748
dc.description.abstractEnA High-Throughput Time-Domain ThermoReflectance (HT-TDTR) technique was developed to perform fast thermal conductivity measurements with minimum user actions required. This new setup is based on a heterodyne picosecond thermoreflectance system. The use of two different laser oscillators has been proven to reduce the acquisition time by two orders of magnitude and avoid the experimental artefacts usually induced by moving the elements present in TDTR systems. An amplitude modulation associated to a lock-in detection scheme is included to maintain a high sensitivity to thermal properties.We demonstrate the capabilities of the HT-TDTR setup to perform high-throughput thermal analysis by mapping thermal conductivity and interface resistances of a ternary thin film silicide library FexSiyGe100-x-y (20 < x, y < 80) deposited by wedge-type multi-layer method on a 100 mm diametersapphire wafer offering more than 300 analysis areas of different ternary alloy compositions.
dc.language.isoen
dc.publisherAmerican Institute of Physics
dc.rights.urihttp://creativecommons.org/licenses/by-sa/
dc.title.enHigh-throughput heterodyne thermoreflectance: Application to thermal conductivity measurements of a Fe–Si–Ge thin film alloy library
dc.typeArticle de revue
dc.identifier.doi10.1063/1.4986469
dc.subject.halSciences de l'ingénieur [physics]/Mécanique [physics.med-ph]/Thermique [physics.class-ph]
dc.subject.halPhysique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]
dc.subject.halSciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
bordeaux.journalReview of Scientific Instruments
bordeaux.page074902
bordeaux.volume88
bordeaux.issue7
bordeaux.peerReviewedoui
hal.identifierhal-01578168
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-01578168v1
bordeaux.COinSctx_ver=Z39.88-2004&amp;rft_val_fmt=info:ofi/fmt:kev:mtx:journal&amp;rft.jtitle=Review%20of%20Scientific%20Instruments&amp;rft.date=2017&amp;rft.volume=88&amp;rft.issue=7&amp;rft.spage=074902&amp;rft.epage=074902&amp;rft.eissn=0034-6748&amp;rft.issn=0034-6748&amp;rft.au=D'ACREMONT,%20Quentin&amp;PERNOT,%20Gilles&amp;RAMPNOUX,%20Jean-Michel&amp;FURLAN,%20Andrej&amp;LACROIX,%20David&amp;rft.genre=article


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