Influence of Substrate Temperature and Film Thickness on Thermal, Electrical, and Structural Properties of HPPMS and DC Magnetron Sputtered Ge Thin Films
Idioma
en
Article de revue
Este ítem está publicado en
Advanced Engineering Materials. 2017, vol. 19, n° 5, p. 1600854
Wiley-VCH Verlag
Resumen en inglés
Ge was deposited as thickness gradient films at temperatures up to 800C by direct current (DC) and high power pulsed magnetron sputtering (HPPMS). Structural characterization shows increased crystallization with increasing ...Leer más >
Ge was deposited as thickness gradient films at temperatures up to 800C by direct current (DC) and high power pulsed magnetron sputtering (HPPMS). Structural characterization shows increased crystallization with increasing substrate temperature and film thickness. Thermal conductivity was measured by a novel high-throughput time-domain thermo-reflectance method. Thermo-electrical properties correlate to the degree of crystallization. Conductivities increase with increasing substrate temperature up to 500C. For higher temperatures the trend reverses. A room temperature deposited/ annealed film displays smaller crystallites (10 nm) and lower thermal conductivity (5Wm-1 K-1) compared to 25Wm-1K-1 for hot DC deposition. Compared to DC, HPPMS films show higher thermal conductivities up to 45Wm-1K-1.< Leer menos
Palabras clave en inglés
Germanium
Thin Films
Thermal Properties
Electrical Properties
DC Magnetron
Orígen
Importado de HalCentros de investigación