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Si and SiGe Nanowires: Fabrication Process and Thermal Conductivity Measurement by 3ω-Scanning Thermal Microscopy

hal.structure.identifierLaboratoire Ondes et Matière d'Aquitaine [LOMA]
dc.contributor.authorGRAUBY, Stéphane
hal.structure.identifierLaboratoire Ondes et Matière d'Aquitaine [LOMA]
hal.structure.identifierLaboratoire des Composants pour la Récupération d'Énergies [LCRE]
hal.structure.identifierInstitut des Nanotechnologies de Lyon [INL]
dc.contributor.authorPUYOO, Etienne
hal.structure.identifierLaboratoire Ondes et Matière d'Aquitaine [LOMA]
dc.contributor.authorRAMPNOUX, Jean-Michel
hal.structure.identifierLaboratoire des Composants pour la Récupération d'Énergies [LCRE]
dc.contributor.authorROUVIÈRE, Emmanuelle
hal.structure.identifierLaboratoire Ondes et Matière d'Aquitaine [LOMA]
dc.contributor.authorDILHAIRE, Stefan
dc.date.created2013-02-22
dc.date.issued2013
dc.identifier.issn1932-7447
dc.description.abstractEnWe have grown various samples of Si and SiGe nanowires (NWs), either by a classical vapor?liquid?solid (VLS) process or by chemical etching, to measure their thermal conductivity and thus evaluate their efficiency for thermoelectrics applications. To do so, we have chosen a 3ω-Scanning Thermal Microscopy (SThM) imaging technique which is until now the only method able to perform topographical and thermal measurements simultaneously on an assembly of individual NWs, leading to a statistical value of their thermal conductivity. A size effect is clearly observed on Si NWs: 50 nm diameter NWs offer a reduced thermal conductivity in comparison with 200 nm diameter or even larger NWs. On the contrary, the thermal conductivity of SiGe NWs is widely reduced in comparison with the SiGe bulk value, even for large diameters, bigger than Si NWs ones. We discuss our results, comparing them with thermal conductivity values from the literature obtained by other measurement methods or models.
dc.description.sponsorshipEtude de l'amplification de la Conduction Thermique dans des Réseaux de Nanoparticules - ANR-06-NANO-0020
dc.language.isoen
dc.publisherAmerican Chemical Society
dc.title.enSi and SiGe Nanowires: Fabrication Process and Thermal Conductivity Measurement by 3ω-Scanning Thermal Microscopy
dc.typeArticle de revue
dc.identifier.doi10.1021/jp4018822
dc.subject.halChimie/Matériaux
bordeaux.journalJournal of Physical Chemistry C
bordeaux.page9025-9034
bordeaux.volume117
bordeaux.issue17
bordeaux.peerReviewedoui
hal.identifierhal-00825416
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00825416v1
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