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hal.structure.identifierDepartment of Electronic Engineering
dc.contributor.authorALDRETE-VIDRIO, E.
hal.structure.identifierCentre de physique moléculaire optique et hertzienne [CPMOH]
dc.contributor.authorSALHI, M. A.
hal.structure.identifierDepartment of Electronic Engineering
dc.contributor.authorALTET, J.
hal.structure.identifierCentre de physique moléculaire optique et hertzienne [CPMOH]
dc.contributor.authorGRAUBY, Stéphane
hal.structure.identifierDepartment of Electronic Engineering
dc.contributor.authorMATEO, D.
hal.structure.identifierCentre de physique moléculaire optique et hertzienne [CPMOH]
dc.contributor.authorMICHEL, H.
hal.structure.identifierCentre de physique moléculaire optique et hertzienne [CPMOH]
dc.contributor.authorCLERJAUD, L.
hal.structure.identifierCentre de physique moléculaire optique et hertzienne [CPMOH]
dc.contributor.authorRAMPNOUX, Jean-Michel
hal.structure.identifierDepartment of Electronic Engineering
dc.contributor.authorRUBIO, A.
hal.structure.identifierCentre de physique moléculaire optique et hertzienne [CPMOH]
dc.contributor.authorCLAEYS, W.
hal.structure.identifierCentre de physique moléculaire optique et hertzienne [CPMOH]
dc.contributor.authorDILHAIRE, Stefan
dc.date.issued2008
dc.date.conference2008-05-25
dc.description.abstractEnThe power dissipated by the devices of an integrated circuit can be considered a signature of the circuit's performance. Without disturbing the circuit operation, this power consumption can be monitored by temperature measurements on the silicon surface. In this paper, the frequency response of a RF LNA is observed by measuring spectral components of the sensed temperature. Results prove that temperature can be used to debug and observe figures of merit of analog blocks in a RFIC. Experimental measurements have been done in a 0.25 mum CMOS process. Laser probing techniques have been used as temperature sensors; specifically, a thermoreflectometer and a Michaelson interferometer.
dc.language.isoen
dc.source.title2008 13th European Test Symposium
dc.subject.enFrequency response
dc.subject.enRadio frequency
dc.subject.enRadiofrequency amplifiers
dc.subject.enTemperature sensors
dc.subject.enTemperature measurement
dc.subject.enCircuit optimization
dc.subject.enEnergy consumption
dc.subject.enSilicon
dc.subject.enFrequency measurement
dc.subject.enIntegrated circuit measurements
dc.title.enUsing temperature as observable of the frequency response of RF CMOS amplifiers
dc.typeCommunication dans un congrès
dc.identifier.doi10.1109/ets.2008.15
dc.subject.halPhysique [physics]
bordeaux.page47-52
bordeaux.countryIT
bordeaux.title.proceeding2008 13th European Test Symposium
bordeaux.conference.cityVerbania
bordeaux.peerReviewednon
hal.identifierhal-01840908
hal.version1
hal.invitednon
hal.proceedingsnon
hal.conference.end2008-05-29
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-01840908v1
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.btitle=2008%2013th%20European%20Test%20Symposium&rft.date=2008&rft.spage=47-52&rft.epage=47-52&rft.au=ALDRETE-VIDRIO,%20E.&SALHI,%20M.%20A.&ALTET,%20J.&GRAUBY,%20St%C3%A9phane&MATEO,%20D.&rft.genre=unknown


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