ALDRETE-VIDRIO, E.; SALHI, M. A.; ALTET, J.; GRAUBY, Stéphane; MATEO, D.; MICHEL, H.; CLERJAUD, L.; RAMPNOUX, Jean-Michel; RUBIO, A.; CLAEYS, W.; DILHAIRE, Stefan

doi:10.1109/ets.2008.15

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ALDRETE-VIDRIO, E.
Department of Electronic Engineering

SALHI, M. A.
Centre de physique moléculaire optique et hertzienne [CPMOH]

ALTET, J.
Department of Electronic Engineering

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2008 13th European Test Symposium, 2008 13th European Test Symposium, 2008-05-25, Verbania. 2008p. 47-52

Resumen en inglés

The power dissipated by the devices of an integrated circuit can be considered a signature of the circuit's performance. Without disturbing the circuit operation, this power consumption can be monitored by temperature measurements on the silicon surface. In this paper, the frequency response of a RF LNA is observed by measuring spectral components of the sensed temperature. Results prove that temperature can be used to debug and observe figures of merit of analog blocks in a RFIC. Experimental measurements have been done in a 0.25 mum CMOS process. Laser probing techniques have been used as temperature sensors; specifically, a thermoreflectometer and a Michaelson interferometer.< Leer menos

Palabras clave en inglés

Frequency response

Radio frequency

Radiofrequency amplifiers

Temperature sensors

Temperature measurement

Circuit optimization

Energy consumption

Silicon

Frequency measurement

Integrated circuit measurements

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Using temperature as observable of the frequency response of RF CMOS amplifiers

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