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Sub‐bandgap activated charges transfer in a graphene‐MoS 2 ‐graphene heterostructure

dc.contributor.authorKUMAR, Sunil
dc.contributor.authorSINGH, Arvind
dc.contributor.authorNIVEDAN, Anand
dc.contributor.authorKUMAR, Sandeep
dc.contributor.authorYUN, Seok Joon
dc.contributor.authorLEE, Young Hee
dc.contributor.authorTONDUSSON, Marc
dc.contributor.authorDEGERT, Jérôme
dc.contributor.authorOBERLE, Jean
hal.structure.identifierLaboratoire Ondes et Matière d'Aquitaine [LOMA]
dc.contributor.authorFREYSZ, Eric
dc.date.issued2021-05-04
dc.identifier.issn2688-4011
dc.description.abstractEnMonolayers of transition metal dichalcogenides are semiconducting materials which offer many prospects in optoelectronics. A monolayer of molybdenum disulfide (MoS2) has a direct bandgap of 1.88 eV. Hence, when excited with optical photon energies below its bandgap, no photocarriers are generated and a monolayer of MoS2 is not ofmuch use in either photovoltaics or photodetection.Here, we demonstrate that large size MoS2 monolayer sandwiched between two graphene layers makes this heterostructure optically active well below the band gap of MoS2. An ultrafast optical pump-THz probe experiment reveals in real-time, transfer of carriers between graphene and MoS2 monolayer upon photoexcitation with photon energies down to 0.5 eV. It also helps to unravel an unprecedented enhancement in the broadband transient THz response of this tri-layer material system. We propose possible mechanism which can account for this phenomenon. Such specially designed heterostructures, which can be easily built around different transition metal dichalcogenide monolayers, will considerably broaden the scope for modern optoelectronic applications at THz bandwidth.
dc.language.isoen
dc.publisherWiley
dc.subject.en2D metal dichalcogenides
dc.subject.engraphene
dc.subject.en2D heterostructure
dc.subject.enTHz
dc.subject.enTime domain spectroscopy
dc.title.enSub‐bandgap activated charges transfer in a graphene‐MoS 2 ‐graphene heterostructure
dc.typeArticle de revue
dc.identifier.doi10.1002/nano.202000159
dc.subject.halPhysique [physics]
dc.identifier.arxiv2103.11101
bordeaux.journalNano Select
bordeaux.peerReviewedoui
hal.identifierhal-03217067
hal.version1
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-03217067v1
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Nano%20Select&rft.date=2021-05-04&rft.eissn=2688-4011&rft.issn=2688-4011&rft.au=KUMAR,%20Sunil&SINGH,%20Arvind&NIVEDAN,%20Anand&KUMAR,%20Sandeep&YUN,%20Seok%20Joon&rft.genre=article


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