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Influence of two photon absorption induced free carriers on coherent polariton and phonon generation in ZnTe crystals

hal.structure.identifierDepartment of Physics
hal.structure.identifierCenter for Ultrafast Laser Applications
dc.contributor.authorKAMARAJU, N.
hal.structure.identifierDepartment of Physics
hal.structure.identifierCenter for Ultrafast Laser Applications
dc.contributor.authorKUMAR, Sunil
hal.structure.identifierCentre de physique moléculaire optique et hertzienne [CPMOH]
dc.contributor.authorFREYSZ, Eric
hal.structure.identifierDepartment of Physics
hal.structure.identifierCenter for Ultrafast Laser Applications
dc.contributor.authorSOOD, A. K.
dc.date.created2009-12-07
dc.date.issued2010-05-18
dc.identifier.issn0021-8979
dc.description.abstractEnCombination of femtosecond Kerr, two photon absorption, and impulsive stimulated Raman scattering (ISRS) experiments have been carried out to investigate the effect of pulse energy and crystal temperature on the generation of coherent polaritons and phonons in (110) cut ZnTe single crystals of three different resistivities. We demonstrate that the effect of two photon induced free carriers on the creation of both the polaritons and phonons is largest at 4 K where the free carrier lifetime is enhanced. The temperature dependant ISRS on high and low purity ZnTe crystals allows us to unambiguously assign the phonon mode at 3.5 THz to the longitudinal acoustic mode at X-point in the Brillouin zone, LA(X).
dc.language.isoen
dc.publisherAmerican Institute of Physics
dc.title.enInfluence of two photon absorption induced free carriers on coherent polariton and phonon generation in ZnTe crystals
dc.typeArticle de revue
dc.identifier.doi10.1063/1.3391445
bordeaux.journalJournal of Applied Physics
bordeaux.page103102 (1-5)
bordeaux.volume107
bordeaux.issue10
bordeaux.peerReviewedoui
hal.identifierhal-00505457
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00505457v1
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