Contact resistance and shot noise in graphene transistors
| hal.structure.identifier | Centre de physique moléculaire optique et hertzienne [CPMOH] | |
| dc.contributor.author | CAYSSOL, J. | |
| hal.structure.identifier | Physics Department [Stanford] | |
| hal.structure.identifier | Laboratoire Pierre Aigrain [LPA] | |
| dc.contributor.author | HUARD, B. | |
| hal.structure.identifier | Physics Department [Stanford] | |
| dc.contributor.author | GOLDHABER-GORDON, D. | |
| dc.date.created | 2008-12-20 | |
| dc.date.issued | 2009-02-15 | |
| dc.identifier.issn | 1098-0121 | |
| dc.description.abstractEn | Potential steps naturally develop in graphene near metallic contacts. We investigate the influence of these steps on the transport in graphene Field Effect Transistors. We give simple expressions to estimate the voltage-dependent contribution of the contacts to the total resistance and noise in the diffusive and ballistic regimes. | |
| dc.description.sponsorship | Electronic EPR Source - ANR-07-NANO-0011 | |
| dc.language.iso | en | |
| dc.publisher | American Physical Society | |
| dc.title.en | Contact resistance and shot noise in graphene transistors | |
| dc.type | Article de revue | |
| dc.identifier.doi | 10.1103/PhysRevB.79.075428 | |
| dc.subject.hal | Physique [physics]/Matière Condensée [cond-mat]/Autre [cond-mat.other] | |
| dc.identifier.arxiv | 0810.4568 | |
| bordeaux.journal | Physical Review B: Condensed Matter and Materials Physics (1998-2015) | |
| bordeaux.page | 075428 (1-6) | |
| bordeaux.volume | 79 | |
| bordeaux.issue | 7 | |
| bordeaux.peerReviewed | oui | |
| hal.identifier | hal-00506080 | |
| hal.version | 1 | |
| hal.popular | non | |
| hal.audience | Internationale | |
| hal.origin.link | https://hal.archives-ouvertes.fr//hal-00506080v1 | |
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