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Monitoring tantalum nitride thin film structure by reactive RF magnetron sputtering: Influence of processing parameters

hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorCHEVIOT, Maureen
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorGOUNÉ, Mohamed
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorPOULON-QUINTIN, Angeline
dc.date.issued2015
dc.identifier.issn0257-8972
dc.description.abstractEnTantalum nitride thin films were deposited onto WC-6%Co substrates using reactive RF magnetron sputtering. Their structure and microstructure were studied and analyzed according to processing parameters. It has been demonstrated that the weight ratio of hexagonal TaN (h-TaN) to face centered cubic TaN (fcc-TaN) strongly depends on adatoms mobility on the substrate surface. In particular, growth conditions promoting adatoms mobility, i.e. low N2 partial pressure, total gas pressure, target-to-substrate distance as well as high target power density, promote the formation of h-TaN structure. Both exclusively fcc-TaN and exclusively h-TaN films were synthesized. A possible mechanism for the stabilization of those structures is discussed.
dc.language.isoen
dc.publisherElsevier
dc.subject.enTantalum nitride
dc.subject.enThin film
dc.subject.enReactive sputtering
dc.subject.enStructure control
dc.subject.enQuenching
dc.title.enMonitoring tantalum nitride thin film structure by reactive RF magnetron sputtering: Influence of processing parameters
dc.typeArticle de revue
dc.identifier.doi10.1016/j.surfcoat.2015.08.075
dc.subject.halChimie/Matériaux
bordeaux.journalSurface and Coatings Technology
bordeaux.page192–197
bordeaux.volume284
bordeaux.peerReviewedoui
hal.identifierhal-01247674
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-01247674v1
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