Mostrar el registro sencillo del ítem

Pulsed laser deposited GeTe-rich GeTe-Sb2Te3 thin films

hal.structure.identifierDepartment of Graphic Arts and Photophysics [University of Pardubice]
dc.contributor.authorBOUŠKA, M.
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorPECHEV, Stanislav
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorSIMON, Quentin
hal.structure.identifierDepartment of Graphic Arts and Photophysics [University of Pardubice]
dc.contributor.authorBOIDIN, R.
hal.structure.identifierInstitut des Sciences Chimiques de Rennes [ISCR]
hal.structure.identifierDepartment of Graphic Arts and Photophysics [University of Pardubice]
dc.contributor.authorNAZABAL, Virginie
hal.structure.identifierDepartment of Graphic Arts and Photophysics [University of Pardubice]
dc.contributor.authorGUTWIRTH, J.
hal.structure.identifierDepartment of Graphic Arts and Photophysics [University of Pardubice]
dc.contributor.authorBAUDET, E.
hal.structure.identifierDepartment of Graphic Arts and Photophysics [University of Pardubice]
dc.contributor.authorNĚMEC, P
dc.date.issued2016
dc.identifier.issn2045-2322
dc.description.abstractEnPulsed laser deposition technique was used for the fabrication of Ge-Te rich GeTe-Sb2Te3 (Ge6Sb2Te9, Ge8Sb2Te11, Ge10Sb2Te13 and Ge12Sb2Te15) amorphous thin films. To evaluate the influence of GeTe content in the deposited films on physico-chemical properties of the GST materials, scanning electron microscopy with energy-dispersive X-ray analysis, X-ray diffraction and reflectometry, atomic force microscopy, Raman scattering spectroscopy, optical reflectivity and sheet resistance temperature dependences as well as variable angle spectroscopic ellipsometry measurements were used to characterize as-deposited (amorphous) and annealed (crystalline) layers. Upon crystallization, optical functions and electrical resistance of the films change drastically, leading to large optical and electrical contrast between amorphous and crystalline phases. Large changes of optical/electrical properties are accompanied by the variations of thickness, density and roughness of the films due to crystallization. Reflectivity contrast as high as ~0.21 at 405 nm was calculated for Ge8Sb2Te11, Ge10Sb2Te13 and Ge12Sb2Te15 layers.
dc.language.isoen
dc.publisherNature Publishing Group
dc.title.enPulsed laser deposited GeTe-rich GeTe-Sb2Te3 thin films
dc.typeArticle de revue
dc.identifier.doi10.1038/srep26552
dc.subject.halChimie
bordeaux.journalScientific Reports
bordeaux.page26552 (10 p.)
bordeaux.volume6
bordeaux.issue1
bordeaux.peerReviewedoui
hal.identifierhal-01326290
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-01326290v1
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Scientific%20Reports&rft.date=2016&rft.volume=6&rft.issue=1&rft.spage=26552%20(10%20p.)&rft.epage=26552%20(10%20p.)&rft.eissn=2045-2322&rft.issn=2045-2322&rft.au=BOU%C5%A0KA,%20M.&PECHEV,%20Stanislav&SIMON,%20Quentin&BOIDIN,%20R.&NAZABAL,%20Virginie&rft.genre=article


Archivos en el ítem

ArchivosTamañoFormatoVer

No hay archivos asociados a este ítem.

Este ítem aparece en la(s) siguiente(s) colección(ones)

Mostrar el registro sencillo del ítem