Afficher la notice abrégée

Large thermoelectric power factors and impact of texturing on the thermal conductivity in polycrystalline SnSe

hal.structure.identifierInstitute of Chemical Sciences and Centre for Advanced Energy Storage and Recovery
dc.contributor.authorPOPURI, Srinivasa Rao
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorPOLLET, Michaël
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorDECOURT, Rodolphe
hal.structure.identifierEaStCHEM School of Chemistry
dc.contributor.authorMORRISON, Finlay D.
hal.structure.identifierNano-Materials Lab.
dc.contributor.authorBENNETT, Nick S.
hal.structure.identifierInstitute of Chemical Sciences and Centre for Advanced Energy Storage and Recovery
dc.contributor.authorBOS, Jan-Willem G.
dc.date.issued2016
dc.identifier.issn2050-7526
dc.description.abstractEnSingle crystals of SnSe have been reported to have very high thermoelectric efficiencies with a maximum figure merit zT = 2.5. This outstanding performance is due to ultralow thermal conductivities. We report on the synthesis of highly textured polycrystalline SnSe ingots with large single-crystal magnitude power factors, S2/ρ = 0.2–0.4 mW m−1 K−2 between 300–600 K, increasing to 0.9 mW m−1 K−2 at 800 K, and bulk thermal conductivity values κ300K = 1.5 W m−1 K−1. However, small SnSe ingots, which were measured in their entirety, were found to have a substantially reduced κ300K = 0.6 W m−1 K−1. Microscopy and diffraction revealed two distinct types of texturing within the hot-pressed ingots. In the interior, large coherent domains of SnSe platelets with a ∼45° orientation with respect to the pressing direction are found, while the platelets are preferentially oriented at 90° to the pressing direction at the top and bottom of the ingots. Fitting the κ(T) data suggests an increase in defect scattering for the smaller ingots, which is in keeping with the presence of regions of structural disorder due to the change in texturing. Combining the measured S2/ρ with the bulk ingot κ values yields zT = 1.1 at 873 K.
dc.language.isoen
dc.publisherRoyal Society of Chemistry
dc.title.enLarge thermoelectric power factors and impact of texturing on the thermal conductivity in polycrystalline SnSe
dc.typeArticle de revue
dc.identifier.doi10.1039/C6TC00204H
dc.subject.halChimie/Matériaux
bordeaux.journalJournal of Materials Chemistry C
bordeaux.page1685-1691
bordeaux.volume4
bordeaux.issue8
bordeaux.peerReviewedoui
hal.identifierhal-01388343
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-01388343v1
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Journal%20of%20Materials%20Chemistry%20C&rft.date=2016&rft.volume=4&rft.issue=8&rft.spage=1685-1691&rft.epage=1685-1691&rft.eissn=2050-7526&rft.issn=2050-7526&rft.au=POPURI,%20Srinivasa%20Rao&POLLET,%20Micha%C3%ABl&DECOURT,%20Rodolphe&MORRISON,%20Finlay%20D.&BENNETT,%20Nick%20S.&rft.genre=article


Fichier(s) constituant ce document

FichiersTailleFormatVue

Il n'y a pas de fichiers associés à ce document.

Ce document figure dans la(les) collection(s) suivante(s)

Afficher la notice abrégée