Improving the dielectric losses of (Ba,Sr)TiO3 thin films using a SiO2 buffer layer
Idioma
en
Article de revue
Este ítem está publicado en
Ceramics International. 2004, vol. 30, n° 7, p. 1085-1087
Elsevier
Resumen en inglés
The efficient use of ferroelectric thin films in rF agile devices faces several limits. One of them is the dielectric losses which are usually above 1%, i.e. above the threshold as set by the electronic industry...
Palabras clave en español
Dielectric properties
Silicon oxide
(Ba
Sr)TiO3