Improving the dielectric losses of (Ba,Sr)TiO3 thin films using a SiO2 buffer layer
Language
en
Article de revue
This item was published in
Ceramics International. 2004, vol. 30, n° 7, p. 1085-1087
Elsevier
English Abstract
The efficient use of ferroelectric thin films in rF agile devices faces several limits. One of them is the dielectric losses which are usually above 1%, i.e. above the threshold as set by the electronic industry...
The efficient use of ferroelectric thin films in rF agile devices faces several limits. One of them is the dielectric losses which are usually above 1%, i.e. above the threshold as set by the electronic industry...Read less <
Spanish Keywords
Dielectric properties
Silicon oxide
(Ba
Sr)TiO3
Origin
Hal imported