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Functional electronic inversion layers at ferroelectric domain walls.

hal.structure.identifierSchool of Applied and Engineering physics [Ithaca] [AEP Cornell]
dc.contributor.authorMUNDY, J. A.
hal.structure.identifierDepartment of Materials
dc.contributor.authorSCHAAB, Jakob
hal.structure.identifierDepartment of Materials
dc.contributor.authorKUMAGAI, Y.
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorCANO, Andres
hal.structure.identifierInstitució Catalana de Recerca i Estudis Avançats = Catalan Institution for Research and Advanced Studies [ICREA]
hal.structure.identifierInstitut de Ciència de Materials de Barcelona [ICMAB]
dc.contributor.authorSTENGEL, M.
hal.structure.identifierInstitut für Optik und Atomare Physik
dc.contributor.authorKRUG, I. P.
hal.structure.identifierPeter Grünberg Institute [PGI-6]
dc.contributor.authorGOTTLOB, D. M.
hal.structure.identifierPeter Grünberg Institute [PGI-6]
dc.contributor.authorDOGANAY, H.
hal.structure.identifierSchool of Applied and Engineering physics [Ithaca] [AEP Cornell]
dc.contributor.authorHOLTZ, Megan E.
hal.structure.identifierDepartment of Materials Science and Engineering
dc.contributor.authorHELD, R.
hal.structure.identifierMaterials Science Division [LBNL Berkeley]
hal.structure.identifierDepartment of Physics
dc.contributor.authorYAN, Zewu
hal.structure.identifierMaterials Science Division [LBNL Berkeley]
dc.contributor.authorBOURRET, Edith
hal.structure.identifierPeter Grünberg Institute [PGI-6]
dc.contributor.authorSCHNEIDER, Claus M.
hal.structure.identifierDepartment of Materials Science and Engineering
hal.structure.identifierKavli Institute at Cornell for Nanoscale Science [KIC]
dc.contributor.authorSCHLOM, Darrell G.
hal.structure.identifierSchool of Applied and Engineering physics [Ithaca] [AEP Cornell]
hal.structure.identifierKavli Institute at Cornell for Nanoscale Science [KIC]
dc.contributor.authorMULLER, David A.
hal.structure.identifierMaterials Science Division [LBNL Berkeley]
hal.structure.identifierDepartment of Materials Science and Engineering and Department of Physics
dc.contributor.authorRAMESH, Ramamoorthy
hal.structure.identifierDepartment of Materials
dc.contributor.authorSPALDIN, Nicola A.
hal.structure.identifierDepartment of Materials
hal.structure.identifierDepartment of Materials Science and Engineering
dc.contributor.authorMEIER, Dennis
dc.date.issued2017
dc.identifier.issn1476-1122
dc.description.abstractEnFerroelectric domain walls hold great promise as functional two-dimensional materials because of their unusual electronic properties. Particularly intriguing are the so-called charged walls where a polarity mismatch causes local, diverging electrostatic potentials requiring charge compensation and hence a change in the electronic structure. These walls can exhibit significantly enhanced conductivity and serve as a circuit path. The development of all-domain-wall devices, however, also requires walls with controllable output to emulate electronic nano-components such as diodes and transistors. Here we demonstrate electric-field control of the electronic transport at ferroelectric domain walls. We reversibly switch from resistive to conductive behaviour at charged walls in semiconducting ErMnO3. We relate the transition to the formation-and eventual activation-of an inversion layer that acts as the channel for the charge transport. The findings provide new insight into the domain-wall physics in ferroelectrics and foreshadow the possibility to design elementary digital devices for all-domain-wall circuitry.
dc.language.isoen
dc.publisherNature Publishing Group
dc.title.enFunctional electronic inversion layers at ferroelectric domain walls.
dc.typeArticle de revue
dc.identifier.doi10.1038/nmat4878
dc.subject.halChimie/Matériaux
bordeaux.journalNature Materials
bordeaux.page622-627
bordeaux.volume16
bordeaux.issue6
bordeaux.peerReviewedoui
hal.identifierhal-01538437
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-01538437v1
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