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hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorREYMOND, Vincent
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorMICHAU, Dominique
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorPAYAN, Sandrine
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorMAGLIONE, Mario
dc.date.issued2004
dc.identifier.issn0953-8984
dc.description.abstractEnThe efficient use of ferroelectric thin films in radio-frequency agile devices faces several limitations. One of them is imposed by the dielectric losses which are usually above 1%, i.e. above the threshold as set by the electronic industry. Following the same route as for bulk ceramics, we have processed composite stacks made of BST/SiO2 multilayers using radio-frequency magnetron sputtering...
dc.language.isoen
dc.publisherIOP Publishing
dc.title.enSubstantial reduction of the dielectric losses of Ba0.6Sr0.4TiO3 thin films using a SiO2 barrier layer
dc.typeArticle de revue
dc.identifier.doi10.1088/0953-8984/16/50/006
dc.subject.halChimie/Matériaux
bordeaux.journalJournal of Physics: Condensed Matter
bordeaux.page9155-9162
bordeaux.volume16
bordeaux.issue50
bordeaux.peerReviewedoui
hal.identifierhal-00160672
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00160672v1
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