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hal.structure.identifierInstitute of Materials Science and Applied Research
dc.contributor.authorKADYS, Arunas
hal.structure.identifierInstitute of Materials Science and Applied Research
dc.contributor.authorSUDZIUS, Markas
hal.structure.identifierInstitute of Materials Science and Applied Research
dc.contributor.authorJARAŠIUNAS, Kestutis
hal.structure.identifierInstitute of Physics
dc.contributor.authorIVANOV, V.
hal.structure.identifierInstitute of Physics
hal.structure.identifierCollege of Science
dc.contributor.authorGODLEWSKI, M.
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorLAUNAY, Jean-Claude
dc.date.issued2004
dc.identifier.issn0587-4246
dc.description.abstractEnRole of deep impurity levels in carrier generation, transport, and recombination were investigated in bulk ZnSe:Cr and ZnTe:V:Al crystals by four-wave mixing technique...
dc.language.isoen
dc.publisherPolish Academy of Sciences. Institute of Physics
dc.subject.enPhotoelectric properties
dc.subject.enTechnics
dc.subject.enInorganic compounds
dc.subject.enZinc tellure
dc.subject.enZinc Selenium
dc.subject.enAluminium
dc.subject.enVanadium
dc.subject.enChrome
dc.title.enInvestigation of photoelectric properties of ZnSe:Cr and ZnTe:V:Al by picosecond four-wave mixing technique
dc.typeArticle de revue
dc.identifier.doi10.12693/APhysPolA.105.651
dc.subject.halChimie/Matériaux
bordeaux.journalActa Physica Polonica A
bordeaux.page651-657
bordeaux.volume105
bordeaux.issue6
bordeaux.peerReviewedoui
hal.identifierhal-00162874
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00162874v1
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