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hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorSIMON, Annie
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorRAVEZ, Jean
dc.date.issued2003
dc.identifier.issn0031-8965
dc.description.abstractEnTTB-type lead-free relaxor compositions containing either lanthanum or bismuth were studied. Their temperature and frequency dielectric properties were investigated on ceramics. The relaxor characteristics of similar compositions containing either lanthanum or bismuth were compared. The value of Tm, the temperature of the maximum of r, was systematically higher for bismuth samples...
dc.language.isoen
dc.publisherWiley
dc.subject.enPermittivity
dc.subject.enDielectric loss and relaxation
dc.subject.enPhase transitions and Curie point
dc.subject.enChemical elements
dc.subject.enBismuth
dc.subject.enLanthanum
dc.title.enLead-free relaxors with "TTB" structure containing either lanthanum or bismuth
dc.typeArticle de revue
dc.identifier.doi10.1002/pssa.200306682
dc.subject.halChimie/Matériaux
bordeaux.journalphysica status solidi (a)
bordeaux.page541-545
bordeaux.volume199
bordeaux.issue3
bordeaux.peerReviewedoui
hal.identifierhal-00174765
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00174765v1
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