Lead-free relaxors with "TTB" structure containing either lanthanum or bismuth
hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
dc.contributor.author | SIMON, Annie | |
hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
dc.contributor.author | RAVEZ, Jean | |
dc.date.issued | 2003 | |
dc.identifier.issn | 0031-8965 | |
dc.description.abstractEn | TTB-type lead-free relaxor compositions containing either lanthanum or bismuth were studied. Their temperature and frequency dielectric properties were investigated on ceramics. The relaxor characteristics of similar compositions containing either lanthanum or bismuth were compared. The value of Tm, the temperature of the maximum of r, was systematically higher for bismuth samples... | |
dc.language.iso | en | |
dc.publisher | Wiley | |
dc.subject.en | Permittivity | |
dc.subject.en | Dielectric loss and relaxation | |
dc.subject.en | Phase transitions and Curie point | |
dc.subject.en | Chemical elements | |
dc.subject.en | Bismuth | |
dc.subject.en | Lanthanum | |
dc.title.en | Lead-free relaxors with "TTB" structure containing either lanthanum or bismuth | |
dc.type | Article de revue | |
dc.identifier.doi | 10.1002/pssa.200306682 | |
dc.subject.hal | Chimie/Matériaux | |
bordeaux.journal | physica status solidi (a) | |
bordeaux.page | 541-545 | |
bordeaux.volume | 199 | |
bordeaux.issue | 3 | |
bordeaux.peerReviewed | oui | |
hal.identifier | hal-00174765 | |
hal.version | 1 | |
hal.popular | non | |
hal.audience | Internationale | |
hal.origin.link | https://hal.archives-ouvertes.fr//hal-00174765v1 | |
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