A combined EPR and modulated photocurrent study of native defects in Bridgman grown vanadium doped cadmium telluride : the case of the tellurium antisite
| hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
| hal.structure.identifier | Centre Spatial de Liège [CSL] | |
| dc.contributor.author | VERSTRAETEN, David | |
| hal.structure.identifier | Laboratoire de génie électrique de Paris [LGEP] | |
| dc.contributor.author | LONGEAUD, Christophe | |
| dc.contributor.author | BEN MAHMOUD, A. | |
| hal.structure.identifier | Groupe de Physique des Solides [GPS] | |
| dc.contributor.author | VON BARDELEBEN, H. J. | |
| hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
| dc.contributor.author | LAUNAY, Jean-Claude | |
| hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
| dc.contributor.author | VIRAPHONG, Oudomsack | |
| hal.structure.identifier | Centre Spatial de Liège [CSL] | |
| dc.contributor.author | LEMAIRE, Ph. C. | |
| dc.date.issued | 2003 | |
| dc.description.abstractEn | The electrical and photoconductive properties of Bridgman grown vanadium–zinc co-doped CdTe bulk crystals are strongly influenced by one native intrinsic defect previously attributed to the Te vacancy. In order to identify this defect and control its formation mechanism, a correlated electron paramagnetic resonance (EPR) and modulated photocurrent (MPC) study has been made. The results obtained allow us to attribute this defect to the TeCd antisite, a double donor. By EPR and MPC its +/2+ level position has been determined to Ec - 0.20 eV. Four other centres of minor concentrations were characterized by MPC in as-grown crystals. From the MPC results the density of states for CdTe:V materials has been determined. | |
| dc.language.iso | en | |
| dc.subject.en | Crystal growth | |
| dc.subject.en | Bridgman method | |
| dc.subject.en | Vanadium | |
| dc.subject.en | Calcium telluride | |
| dc.subject.en | Antisite | |
| dc.subject.en | Modulated photocurrent | |
| dc.subject.en | Electron paramagnetic resonance | |
| dc.title.en | A combined EPR and modulated photocurrent study of native defects in Bridgman grown vanadium doped cadmium telluride : the case of the tellurium antisite | |
| dc.type | Article de revue | |
| dc.identifier.doi | 10.1088/0268-1242/18/11/303 | |
| dc.subject.hal | Chimie/Matériaux | |
| bordeaux.journal | Semiconductor Science and Technolgoy | |
| bordeaux.page | 919-926 | |
| bordeaux.volume | 18 | |
| bordeaux.issue | 11 | |
| bordeaux.peerReviewed | oui | |
| hal.identifier | hal-00182645 | |
| hal.version | 1 | |
| hal.popular | non | |
| hal.audience | Internationale | |
| hal.origin.link | https://hal.archives-ouvertes.fr//hal-00182645v1 | |
| bordeaux.COinS | ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Semiconductor%20Science%20and%20Technolgoy&rft.date=2003&rft.volume=18&rft.issue=11&rft.spage=919-926&rft.epage=919-926&rft.au=VERSTRAETEN,%20David&LONGEAUD,%20Christophe&BEN%20MAHMOUD,%20A.&VON%20BARDELEBEN,%20H.%20J.&LAUNAY,%20Jean-Claude&rft.genre=article |
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