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hal.structure.identifierNational Research Center "Kurchatov Institute" [NRC KI]
hal.structure.identifierNanotechnology Research and Education Centre
hal.structure.identifierSt Petersburg State University [SPbU]
dc.contributor.authorUTESOV, Oleg
hal.structure.identifierLaboratoire Ondes et Matière d'Aquitaine [LOMA]
dc.contributor.authorBURDIN, Sébastien
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorROSA, Patrick
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorGONIDEC, Mathieu
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorPOGGINI, Lorenzo
hal.structure.identifierITMO University [Russia]
dc.contributor.authorANDREEV, S. V.
dc.date.issued2019-12
dc.identifier.issn1098-0121
dc.description.abstractEnWe present a theoretical model of spin transitions in stacks of molecular layers. Our model captures the already established physics of these systems (thermal hysteretic transitions and crossovers) and suggests a way towards in situ control of this physics by means of an external electric field. Our results pave the way toward both temperature and voltage controllable organic memory.
dc.language.isoen
dc.publisherAmerican Physical Society
dc.title.enElectric-field control of spin transitions in molecular compounds
dc.typeArticle de revue
dc.identifier.doi10.1103/PhysRevB.100.235126
dc.subject.halPhysique [physics]/Matière Condensée [cond-mat]
dc.identifier.arxiv1910.08618
bordeaux.journalPhysical Review B: Condensed Matter and Materials Physics (1998-2015)
bordeaux.page235126
bordeaux.volume100
bordeaux.issue23
bordeaux.peerReviewedoui
hal.identifierhal-02418749
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-02418749v1
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