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hal.structure.identifierInstitut des Sciences Moléculaires [ISM]
dc.contributor.authorKARAM, Lara
hal.structure.identifierInstitut des Sciences Moléculaires [ISM]
dc.contributor.authorADAMIETZ, Frédéric
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorMICHAU, Dominique
hal.structure.identifierCenter for Research and Education in Optics and Lasers [CREOL]
dc.contributor.authorGONÇALVES, Claudia
hal.structure.identifierCenter for Research and Education in Optics and Lasers [CREOL]
dc.contributor.authorKANG, Myungkoo
hal.structure.identifierCenter for Research and Education in Optics and Lasers [CREOL]
dc.contributor.authorSHARMA, Rashi
hal.structure.identifierOptoelectronics Research Centre [Southampton] [ORC]
dc.contributor.authorMURUGAN, Ganapathy
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorCARDINAL, Thierry
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorFARGIN, Evelyne
hal.structure.identifierInstitut des Sciences Moléculaires [ISM]
dc.contributor.authorRODRIGUEZ, Vincent
hal.structure.identifierCenter for Research and Education in Optics and Lasers [CREOL]
dc.contributor.authorRICHARDSON, Kathleen
hal.structure.identifierInstitut des Sciences Moléculaires [ISM]
dc.contributor.authorDUSSAUZE, Marc
dc.date.issued2020-07
dc.identifier.issn2195-1071
dc.description.abstractEnThe design of active optical devices integrating second‐order nonlinear (SONL) optical responses typically relies on the use of dielectric crystalline materials such as lithium niobate (LN) or semiconductors such as GaAs. Despite high SONL susceptibilities, these materials present important geometry constrains inherent to their crystalline nature limiting the complexity of the designed photonic systems. Conversely, amorphous materials are versatile optical media compatible with broad platform designs possessing a wide range of optical properties attributable to their composition flexibility. Demonstrated here for the first time in an amorphous inorganic material, a magnitude of SONL optical susceptibility (χ(2) = 29 pm V−1 at 1.06 µm) comparable to that of LN single crystal is reported. By using a thermo‐electrical imprinting process, fine control of the induced uniaxial anisotropy is demonstrated at the micrometer scale. This work paves the way for the future design of integrated nonlinear photonic circuits based on amorphous inorganic materials enabled by the spatially selective and high SONL optical susceptibility of these promising and novel optical materials.
dc.description.sponsorshipInitiative d'excellence de l'Université de Bordeaux - ANR-10-IDEX-0003
dc.language.isoen
dc.publisherWiley
dc.subject.enAmorphous thin films
dc.subject.enNonlinear optical materials
dc.subject.enPoling
dc.title.enElectrically micro-polarized amorphous sodo-niobate film competing with crystalline lithium niobate second-order optical response
dc.typeArticle de revue
dc.identifier.doi10.1002/adom.202000202
dc.subject.halChimie/Matériaux
bordeaux.journalAdvanced Optical Materials
bordeaux.page2000202 (6 p.)
bordeaux.volume8
bordeaux.issue13
bordeaux.peerReviewedoui
hal.identifierhal-02892486
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-02892486v1
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Advanced%20Optical%20Materials&rft.date=2020-07&rft.volume=8&rft.issue=13&rft.spage=2000202%20(6%20p.)&rft.epage=2000202%20(6%20p.)&rft.eissn=2195-1071&rft.issn=2195-1071&rft.au=KARAM,%20Lara&ADAMIETZ,%20Fr%C3%A9d%C3%A9ric&MICHAU,%20Dominique&GON%C3%87ALVES,%20Claudia&KANG,%20Myungkoo&rft.genre=article


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