Vertical Tunnel Junction Embedding a Spin Crossover Molecular Film
| hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
| dc.contributor.author | POGGINI, Lorenzo | |
| hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
| dc.contributor.author | GONIDEC, Mathieu | |
| hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
| dc.contributor.author | GONZÁLEZ-ESTEFAN, Juan | |
| hal.structure.identifier | Laboratoire de Chimie des Polymères Organiques [LCPO] | |
| hal.structure.identifier | Team 4 LCPO : Polymer Materials for Electronic, Energy, Information and Communication Technologies | |
| dc.contributor.author | PÉCASTAINGS, Gilles | |
| hal.structure.identifier | Synchrotron SOLEIL [SSOLEIL] | |
| dc.contributor.author | GOBAUT, Benoît | |
| hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
| dc.contributor.author | ROSA, Patrick | |
| dc.date.issued | 2018-09-05 | |
| dc.description.abstractEn | Thin films of a molecular spin crossover (SCO) Iron(II) complex featuring a high transition temperature are grown by sublimation in high vacuum on TSAu and investigated by X-ray and UV photoelectron spectroscopies. Temperature-dependent studies demonstrate that the thermally induced spin crossover behavior is preserved in thin films. A large-area ultrathin switchable spin crossover molecular vertical tunnel junction with top electrodes of the liquid eutectic of gallium and indium, for which the spin-state switching of the films induces a two orders of magnitude change in the tunneling current density flowing through the junction, is reported here. The results on large-area junctions, rationalized by density functional theory calculations, demonstrate the high potential of SCO-based switchable molecular junctions as functional devices. | |
| dc.description.sponsorship | Initiative d'excellence de l'Université de Bordeaux - ANR-10-IDEX-0003 | |
| dc.language.iso | en | |
| dc.publisher | Wiley | |
| dc.subject.en | tunnel junctions | |
| dc.subject.en | thin films | |
| dc.subject.en | spin crossover (SCO) | |
| dc.subject.en | eutectic gallium indium alloy (EGaIn) | |
| dc.title.en | Vertical Tunnel Junction Embedding a Spin Crossover Molecular Film | |
| dc.type | Article de revue | |
| dc.identifier.doi | 10.1002/aelm.201800204 | |
| dc.subject.hal | Chimie/Polymères | |
| bordeaux.journal | Advanced Electronic Materials | |
| bordeaux.page | 1800204 (8 p.) | |
| bordeaux.volume | 4 | |
| bordeaux.issue | 12 | |
| bordeaux.peerReviewed | oui | |
| hal.identifier | hal-01934788 | |
| hal.version | 1 | |
| hal.popular | non | |
| hal.audience | Internationale | |
| hal.origin.link | https://hal.archives-ouvertes.fr//hal-01934788v1 | |
| bordeaux.COinS | ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Advanced%20Electronic%20Materials&rft.date=2018-09-05&rft.volume=4&rft.issue=12&rft.spage=1800204%20(8%20p.)&rft.epage=1800204%20(8%20p.)&rft.au=POGGINI,%20Lorenzo&GONIDEC,%20Mathieu&GONZ%C3%81LEZ-ESTEFAN,%20Juan&P%C3%89CASTAINGS,%20Gilles&GOBAUT,%20Beno%C3%AEt&rft.genre=article |
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