Presence of Peierls pairing and absence of insulator-to-metal transition in VO2 (A): a structure-property relationship study.
hal.structure.identifier | Institute of Chemical Sciences and Centre for Advanced Energy Storage and Recovery | |
dc.contributor.author | POPURI, Srinivasa Rao | |
hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
dc.contributor.author | ARTEMENKO, Alla | |
hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
dc.contributor.author | DECOURT, Rodolphe | |
hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
dc.contributor.author | VILLESUZANNE, Antoine | |
hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
dc.contributor.author | POLLET, Michaël | |
dc.date.issued | 2017 | |
dc.identifier.issn | 1463-9076 | |
dc.description.abstractEn | Layered vanadium oxides have been extensively explored due to their interesting metal-insulator transitions and energy conversion/storage applications. In the present study, we have successfully synthesized VO2 (A) polymorph powder samples by a single-step hydrothermal synthesis process and consolidated them using spark plasma sintering. The structural and electronic properties of VO2 (A) are measured over a large temperature range from liquid helium, across the structural transition (400-440 K) and up to 500 K. The structural analysis around this transition reveals an antiferrodistorsive to partially ferrodistorsive ordering upon cooling. It is followed by a progressive antiferromagnetic spin pairing which fully settles at about 150 K. The transport measurements show that, in contrast to the rutile archetype VO2 (R/M1), the structural transition comes with a transition from semiconductor to band-type insulator. Under these circumstances, we propose a scenario with a high temperature antiferrodistorsive paramagnetic semiconducting phase, followed by an intermediate regime with a partially ferrodistorsive paramagnetic semiconducting phase, and finally a low temperature partially ferrodistorsive antiferromagnetic band insulator phase with a possible V-V Peierls-type pairing. | |
dc.language.iso | en | |
dc.publisher | Royal Society of Chemistry | |
dc.title.en | Presence of Peierls pairing and absence of insulator-to-metal transition in VO2 (A): a structure-property relationship study. | |
dc.type | Article de revue | |
dc.identifier.doi | 10.1039/C7CP00248C | |
dc.subject.hal | Chimie/Matériaux | |
dc.subject.hal | Chimie/Chimie inorganique | |
bordeaux.journal | Physical Chemistry Chemical Physics | |
bordeaux.page | 6601-6609 | |
bordeaux.volume | 19 | |
bordeaux.issue | 9 | |
bordeaux.peerReviewed | oui | |
hal.identifier | hal-01490262 | |
hal.version | 1 | |
hal.popular | non | |
hal.audience | Internationale | |
hal.origin.link | https://hal.archives-ouvertes.fr//hal-01490262v1 | |
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