Structural, thermal, and electrical properties of CrSi2
| hal.structure.identifier | Materials Research Centre | |
| dc.contributor.author | DASGUPTA, T. | |
| hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
| dc.contributor.author | ETOURNEAU, Jean | |
| hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
| dc.contributor.author | CHEVALIER, Bernard | |
| hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
| dc.contributor.author | MATAR, Samir F. | |
| hal.structure.identifier | Materials Research Centre | |
| dc.contributor.author | UMARJI, A. M. | |
| dc.date.issued | 2008 | |
| dc.identifier.issn | 0021-8979 | |
| dc.description.abstractEn | Stoichiometric CrSi2 was prepared by arc melting and compacted by uniaxial hot pressing for property measurements. The crystal structure of CrSi2 was investigated using the powder x-ray diffraction method. From the Rietveld refinement, the lattice parameters were found to be a=4.427 57 (7) and c=6.368 04 (11) Å, respectively. The thermal expansion measurement revealed an anisotropic expansion in the temperature range from room temperature 800 K with alphaa=14.58×10−6/K, alphac=7.51×10−6/K, and alphaV=12.05×10−6/K. The volumetric thermal expansion coefficient shows an anomalous decrease in the temperature range of 450–600 K. The measured electrical resistivity rho and thermoelectric power S have similar trends with a maxima around 550 K. Thermal conductivity measurements show a monotonic decrease with increasing temperature from a room temperature value of 10 W m−1 K−1. The ZT values increase with temperature and have a maximum value of 0.18 in the temperature range studied. An analysis of the electronic band structure is provided. | |
| dc.language.iso | en | |
| dc.publisher | American Institute of Physics | |
| dc.subject.en | Band structure | |
| dc.subject.en | Chromium compounds | |
| dc.subject.en | Crystal structure | |
| dc.subject.en | Electrical resistivity | |
| dc.subject.en | Hot pressing | |
| dc.subject.en | Lattice constants | |
| dc.subject.en | Semiconductor materials | |
| dc.subject.en | Stoichiometry | |
| dc.subject.en | Thermal conductivity | |
| dc.subject.en | Thermal expansion | |
| dc.subject.en | Thermoelectric power | |
| dc.subject.en | X-ray diffraction | |
| dc.title.en | Structural, thermal, and electrical properties of CrSi2 | |
| dc.type | Article de revue | |
| dc.identifier.doi | 10.1063/1.2917347 | |
| dc.subject.hal | Chimie/Matériaux | |
| bordeaux.journal | Journal of Applied Physics | |
| bordeaux.page | 113516 | |
| bordeaux.volume | 103 | |
| bordeaux.issue | 11 | |
| bordeaux.peerReviewed | oui | |
| hal.identifier | hal-00292837 | |
| hal.version | 1 | |
| hal.popular | non | |
| hal.audience | Internationale | |
| hal.origin.link | https://hal.archives-ouvertes.fr//hal-00292837v1 | |
| bordeaux.COinS | ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Journal%20of%20Applied%20Physics&rft.date=2008&rft.volume=103&rft.issue=11&rft.spage=113516&rft.epage=113516&rft.eissn=0021-8979&rft.issn=0021-8979&rft.au=DASGUPTA,%20T.&ETOURNEAU,%20Jean&CHEVALIER,%20Bernard&MATAR,%20Samir%20F.&UMARJI,%20A.%20M.&rft.genre=article |
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