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hal.structure.identifierMaterials Research Centre
dc.contributor.authorDASGUPTA, T.
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorETOURNEAU, Jean
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorCHEVALIER, Bernard
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorMATAR, Samir F.
hal.structure.identifierMaterials Research Centre
dc.contributor.authorUMARJI, A. M.
dc.date.issued2008
dc.identifier.issn0021-8979
dc.description.abstractEnStoichiometric CrSi2 was prepared by arc melting and compacted by uniaxial hot pressing for property measurements. The crystal structure of CrSi2 was investigated using the powder x-ray diffraction method. From the Rietveld refinement, the lattice parameters were found to be a=4.427 57 (7) and c=6.368 04 (11) Å, respectively. The thermal expansion measurement revealed an anisotropic expansion in the temperature range from room temperature 800 K with alphaa=14.58×10−6/K, alphac=7.51×10−6/K, and alphaV=12.05×10−6/K. The volumetric thermal expansion coefficient shows an anomalous decrease in the temperature range of 450–600 K. The measured electrical resistivity rho and thermoelectric power S have similar trends with a maxima around 550 K. Thermal conductivity measurements show a monotonic decrease with increasing temperature from a room temperature value of 10 W m−1 K−1. The ZT values increase with temperature and have a maximum value of 0.18 in the temperature range studied. An analysis of the electronic band structure is provided.
dc.language.isoen
dc.publisherAmerican Institute of Physics
dc.subject.enBand structure
dc.subject.enChromium compounds
dc.subject.enCrystal structure
dc.subject.enElectrical resistivity
dc.subject.enHot pressing
dc.subject.enLattice constants
dc.subject.enSemiconductor materials
dc.subject.enStoichiometry
dc.subject.enThermal conductivity
dc.subject.enThermal expansion
dc.subject.enThermoelectric power
dc.subject.enX-ray diffraction
dc.title.enStructural, thermal, and electrical properties of CrSi2
dc.typeArticle de revue
dc.identifier.doi10.1063/1.2917347
dc.subject.halChimie/Matériaux
bordeaux.journalJournal of Applied Physics
bordeaux.page113516
bordeaux.volume103
bordeaux.issue11
bordeaux.peerReviewedoui
hal.identifierhal-00292837
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00292837v1
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