DASGUPTA, T.; ETOURNEAU, Jean; CHEVALIER, Bernard; MATAR, Samir F.; UMARJI, A. M.

doi:10.1063/1.2917347

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DASGUPTA, T.
Materials Research Centre

ETOURNEAU, Jean
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]

CHEVALIER, Bernard
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]

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Journal of Applied Physics. 2008, vol. 103, n° 11, p. 113516

American Institute of Physics

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Stoichiometric CrSi2 was prepared by arc melting and compacted by uniaxial hot pressing for property measurements. The crystal structure of CrSi2 was investigated using the powder x-ray diffraction method. From the Rietveld refinement, the lattice parameters were found to be a=4.427 57 (7) and c=6.368 04 (11) Å, respectively. The thermal expansion measurement revealed an anisotropic expansion in the temperature range from room temperature 800 K with alphaa=14.58×10−6/K, alphac=7.51×10−6/K, and alphaV=12.05×10−6/K. The volumetric thermal expansion coefficient shows an anomalous decrease in the temperature range of 450–600 K. The measured electrical resistivity rho and thermoelectric power S have similar trends with a maxima around 550 K. Thermal conductivity measurements show a monotonic decrease with increasing temperature from a room temperature value of 10 W m−1 K−1. The ZT values increase with temperature and have a maximum value of 0.18 in the temperature range studied. An analysis of the electronic band structure is provided.< Leer menos

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Band structure

Chromium compounds

Crystal structure

Electrical resistivity

Hot pressing

Lattice constants

Semiconductor materials

Stoichiometry

Thermal conductivity

Thermal expansion

Thermoelectric power

X-ray diffraction

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Structural, thermal, and electrical properties of CrSi2

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