Spectroscopic characterization of Er3+-doped Tl3PbBr5 for midinfrared laser applications
VELÁZQUEZ, Matias
Centre de recherche sur les Ions, les MAtériaux et la Photonique [CIMAP - UMR 6252]
Centre de recherche sur les Ions, les MAtériaux et la Photonique [CIMAP - UMR 6252]
MONCORGÉ, Richard
Centre de recherche sur les Ions, les MAtériaux et la Photonique [CIMAP - UMR 6252]
Centre de recherche sur les Ions, les MAtériaux et la Photonique [CIMAP - UMR 6252]
VELÁZQUEZ, Matias
Centre de recherche sur les Ions, les MAtériaux et la Photonique [CIMAP - UMR 6252]
Centre de recherche sur les Ions, les MAtériaux et la Photonique [CIMAP - UMR 6252]
MONCORGÉ, Richard
Centre de recherche sur les Ions, les MAtériaux et la Photonique [CIMAP - UMR 6252]
< Réduire
Centre de recherche sur les Ions, les MAtériaux et la Photonique [CIMAP - UMR 6252]
Langue
en
Article de revue
Ce document a été publié dans
Physical Review B: Condensed Matter and Materials Physics (1998-2015). 2008, vol. 77, p. 075122
American Physical Society
Résumé en anglais
This paper presents the optical and spectroscopic properties of a low-phonon-energy, moisture-resistant, and nonlinear Er3+:Tl3PbBr5 single crystal. Though only weakly doped with Er3+ ions, centimeter-sized and good quality ...Lire la suite >
This paper presents the optical and spectroscopic properties of a low-phonon-energy, moisture-resistant, and nonlinear Er3+:Tl3PbBr5 single crystal. Though only weakly doped with Er3+ ions, centimeter-sized and good quality single crystals could be grown and analyzed. Excitation and emission spectra recorded at low temperature and crystal-field calculations agree with the existence of only one dominant Er3+ substitutional site. Anti-Stokes emission and excitation spectra as well as fluorescence decays and time-resolved emission and excited-state excitation spectra were recorded and analyzed to determine the different ways of populating the Er3+ excited levels and to provide all the necessary elements for an estimate of the laser potential of the considered material under diode laser pumping around 800 nm.< Réduire
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