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hal.structure.identifierModelling and Simulation in Materials Science Laboratory
dc.contributor.authorRIANE, Rabah
hal.structure.identifierModelling and Simulation in Materials Science Laboratory
dc.contributor.authorBOUSSAHL, Zouaoui
hal.structure.identifierModelling and Simulation in Materials Science Laboratory
dc.contributor.authorZAOUI, Ali
hal.structure.identifierLaboratoire des Sciences fondamentales [LSF]
dc.contributor.authorHAMMERELAINE, Lahcene
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorMATAR, Samir F.
dc.date.issued2009
dc.identifier.issn1293-2558
dc.description.abstractEnFirst principles total energy calculations were carried out to investigate structural and electronic properties of zinc blende GaN, BN and BxGa1−xN solid solutions. We have calculated lattice parameters, bulk modulus, pressure derivative and BxGa1−xN band gap energy for zinc blende-type crystals of the compositions x = 0, 0.25, 0.5, 0.75, 1. Discussions will be given in comparison with results obtained with other available theoretical and experimental results.
dc.language.isoen
dc.publisherElsevier
dc.subject.enDFT
dc.subject.enWide gap semiconductors
dc.subject.enFP-LAPW
dc.typeArticle de revue
dc.identifier.doi10.1016/j.solidstatesciences.2008.06.001
dc.subject.halChimie/Matériaux
bordeaux.journalSolid State Sciences
bordeaux.page200-206
bordeaux.volume11
bordeaux.issue1
bordeaux.peerReviewedoui
hal.identifierhal-00351469
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00351469v1
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