Reversible switching between p- and n-type conduction in the semiconductor Ag<sub>10</sub>Te<sub>4</sub>Br<sub>3</sub>
| hal.structure.identifier | Institut für Anorganische und Analytische Chemie | |
| dc.contributor.author | NILGES, Tom | |
| hal.structure.identifier | Institut für Anorganische und Analytische Chemie | |
| dc.contributor.author | LANGE, Stefan | |
| hal.structure.identifier | Institut für Anorganische und Analytische Chemie | |
| dc.contributor.author | BAWOHL, Melanie | |
| hal.structure.identifier | Institut für Anorganische und Analytische Chemie | |
| dc.contributor.author | DECKWART, Jens Markus | |
| hal.structure.identifier | Institut für Anorganische und Analytische Chemie | |
| dc.contributor.author | JANSSEN, Martin | |
| hal.structure.identifier | Institut für Anorganische und Analytische Chemie | |
| dc.contributor.author | WIEMHÖFER, Hans-Dieter | |
| hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
| dc.contributor.author | DECOURT, Rodolphe | |
| hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
| dc.contributor.author | CHEVALIER, Bernard | |
| hal.structure.identifier | Institut für Physikalische Chemie | |
| dc.contributor.author | VANNAHME, Julia | |
| hal.structure.identifier | Institut für Physikalische Chemie | |
| dc.contributor.author | ECKERT, Helmut | |
| hal.structure.identifier | Institut für Anorganische Chemie | |
| dc.contributor.author | WEIHRICH, Richard | |
| dc.date.issued | 2009 | |
| dc.identifier.issn | 1476-1122 | |
| dc.description.abstractEn | Switching between n- and p-type conduction in a semiconductor can be done through doping. A fundamentally different behaviour has now been observed in Ag<sub>10</sub>Te<sub>4</sub>Br<sub>3</sub>, as a transition from ionic to electronic conduction is achieved simply by heating, which could be used for switches or in novel electronic devices. | |
| dc.language.iso | en | |
| dc.publisher | Nature Publishing Group | |
| dc.title.en | Reversible switching between p- and n-type conduction in the semiconductor Ag<sub>10</sub>Te<sub>4</sub>Br<sub>3</sub> | |
| dc.type | Article de revue | |
| dc.identifier.doi | 10.1038/nmat2358 | |
| dc.subject.hal | Chimie/Matériaux | |
| bordeaux.journal | Nature Materials | |
| bordeaux.page | 101-108 | |
| bordeaux.volume | 8 | |
| bordeaux.issue | 2 | |
| bordeaux.peerReviewed | oui | |
| hal.identifier | hal-00359233 | |
| hal.version | 1 | |
| hal.popular | non | |
| hal.audience | Internationale | |
| hal.origin.link | https://hal.archives-ouvertes.fr//hal-00359233v1 | |
| bordeaux.COinS | ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Nature%20Materials&rft.date=2009&rft.volume=8&rft.issue=2&rft.spage=101-108&rft.epage=101-108&rft.eissn=1476-1122&rft.issn=1476-1122&rft.au=NILGES,%20Tom&LANGE,%20Stefan&BAWOHL,%20Melanie&DECKWART,%20Jens%20Markus&JANSSEN,%20Martin&rft.genre=article |
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