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hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorCHEVALIER, Bernard
hal.structure.identifierInstitut für Anorganische und Analytische Chemie
dc.contributor.authorHERMES, Wilfried
hal.structure.identifierInstitut für Anorganische und Analytische Chemie
dc.contributor.authorHEYING, Birgit
hal.structure.identifierInstitut für Anorganische und Analytische Chemie
dc.contributor.authorRODEWALD, Ute Ch.
hal.structure.identifierInstitut für Anorganische und Analytische Chemie
dc.contributor.authorHAMMERSCHMIDT, Adrienne
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorMATAR, Samir F.
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorGAUDIN, Etienne
hal.structure.identifierInstitut für Anorganische und Analytische Chemie
dc.contributor.authorPÖTTGEN, Rainer
dc.date.issued2010
dc.identifier.issn0897-4756
dc.description.abstractEnThe La<sub>2</sub>Sb type silicides and germanides REScSi and REScGe (RE = La, Ce) were synthesized from the elements by arc-melting and subsequent annealing at 1170 K. The structures of LaScSi and LaScGe were refined on the basis of single-crystal X-ray diffraction data. The structures consist of a stacking of two-dimensional [ScSi] networks with ScSi<sub>4/4</sub> rectangles, which are separated by rare earth atoms, which leave RE<sub>4/4</sub> tetrahedral voids. The latter can be completely filled by hydrogenation leading to the quaternary hydrides REScSiH and REScGeH (RE = La, Ce). Hydrogenation is accompanied by an anisotropic unit cell expansion, i.e., a decrease in the <i>a</i> lattice parameter and a strong increase in <i>c</i>. The H-insertion into the compounds based on cerium induces for both a quasi-2D structure, a strong decrease of their antiferromagnetic ordering; for instance <i>T</i><sub>N</sub> decreases from 26 to 3.0 K in the sequence CeScSi → CeScSiH and the occurrence of the influence of the Kondo effect evidenced by electrical resistivity and specific heat measurements. The electronic structure calculation applied to CeScSi and its hydride reveals strong Ce−H bonding influencing the magnetic properties of CeScSiH.
dc.language.isoen
dc.publisherAmerican Chemical Society
dc.title.enNew hydrides REScSiH and REScGeH (RE = La, Ce) : structure, magnetism, and chemical bonding
dc.typeArticle de revue
dc.identifier.doi10.1021/cm101290f
dc.subject.halChimie/Matériaux
bordeaux.journalChemistry of Materials
bordeaux.page5013-5021
bordeaux.volume22
bordeaux.issue17
bordeaux.peerReviewedoui
hal.identifierhal-00528356
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00528356v1
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