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hal.structure.identifierLaboratoire réactivité et chimie des solides - UMR CNRS 7314 UPJV [LRCS]
dc.contributor.authorCLATOT, Johnny
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorCAMPET, Guy
hal.structure.identifierLaboratoire de Physique de la Matière Condensée - UR UPJV 2081 [LPMC]
dc.contributor.authorZEINERT, C.
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorLABRUGÈRE, Christine
hal.structure.identifierNational Institute for Lasers, Plasmas and Radiation Physics [NILPRP]
dc.contributor.authorNISTOR, Magda
hal.structure.identifierLaboratoire réactivité et chimie des solides - UMR CNRS 7314 UPJV [LRCS]
dc.contributor.authorROUGIER, Aline
dc.date.issued2011
dc.identifier.issn0927-0248
dc.description.abstractEnSi doped zinc oxide (SZO, Si 3%) thin films are grown at low substrate temperature (<i>T</i>≤150 °C) under oxygen atmosphere, using pulsed laser deposition (PLD). Si addition leads to film amorphization and higher densification. Hall effect measurements indicate a resistivity of 7.9×10<sup>−4</sup> Ω cm for SZO thin films deposited at 100 °C under optimized 1.0 Pa oxygen pressure. This value is in good agreement with optical resistivity simulated from the transmittance spectra. XPS measurements suggest more than one oxygen environment, and a Si oxidation state lying in between 2 and 3 only. As a matter of fact, the values of both measured and simulated carrier numbers are smaller than the ones expected, assuming that all Si cations in the ZnO matrix are at the 4<sup>+</sup> oxidation state. Finally, the differences in the electrical and optical properties of SZO thin films deposited both on glass and PET substrates confirm the strong dependency of the electronic properties to the film crystallinity and stoichiometry in relationship with the substrate nature.
dc.language.isoen
dc.publisherElsevier
dc.title.enLow temperature Si doped ZnO thin films for transparent conducting oxides
dc.typeArticle de revue
dc.identifier.doi10.1016/j.solmat.2011.04.006
dc.subject.halChimie/Matériaux
bordeaux.journalSolar Energy Materials and Solar Cells
bordeaux.page2357-2362
bordeaux.volume95
bordeaux.issue8
bordeaux.peerReviewedoui
hal.identifierhal-00606548
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00606548v1
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