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Amorphous Tm3+ doped sulfide thin films fabricated by sputtering

hal.structure.identifierInstitut des Sciences Chimiques de Rennes [ISCR]
dc.contributor.authorNAZABAL, Virginie
hal.structure.identifierLaboratoire de Physico-Chimie des Matériaux Luminescents [LPCML]
dc.contributor.authorJURDYC, Anne-Marie
hal.structure.identifierUniversity of Pardubice
dc.contributor.authorNEMEC, P.
hal.structure.identifierInstitut des Sciences Chimiques de Rennes [ISCR]
dc.contributor.authorBRANDILY-ANNE, Marie-Laure
hal.structure.identifierSchool of Material Science and Engineering
dc.contributor.authorPETIT, Laëtitia
hal.structure.identifierSchool of Material Science and Engineering
dc.contributor.authorRICHARDSON, Katheleen
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorVINATIER, Philippe
hal.structure.identifierInstitut des Sciences Chimiques de Rennes [ISCR]
dc.contributor.authorBOUSQUET, Cathel
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorCARDINAL, Thierry
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorPECHEV, Stanislav
hal.structure.identifierInstitut des Sciences Chimiques de Rennes [ISCR]
dc.contributor.authorADAM, Jean-Luc
dc.date.issued2010
dc.identifier.issn0925-3467
dc.description.abstractEnAmorphous chalcogenide films play a motivating role in the development of integrated planar optical circuits and their components. The aim of the present investigation was to optimize deposition conditions for preparation of pure and Tm3+ doped sulfide films by radio-frequency magnetron sputtering. The study of their composition, morphological characteristics and thermal properties was realized by scanning electronic microscope attached with energy dispersive spectroscopy, Rutherford backscattering, X-ray diffraction, and micro-thermal probe. Some optical properties, like transmission, index of refraction, optical band-gap, propagation modes from 633 to 1540 nm, were investigated on thin films. The whole results point out hopeful perspectives strengthened by the clear observation of the near-infrared photo-luminescence of Tm3+ doped sulfide films.
dc.language.isoen
dc.publisherElsevier
dc.subject.enChalcogenide glasses
dc.subject.enThin film
dc.subject.enRF sputtering
dc.subject.enThulium
dc.title.enAmorphous Tm3+ doped sulfide thin films fabricated by sputtering
dc.typeArticle de revue
dc.identifier.doi10.1016/j.optmat.2010.08.023
dc.subject.halChimie/Matériaux
bordeaux.journalOptical Materials
bordeaux.page220-226
bordeaux.volume33
bordeaux.issue2
bordeaux.peerReviewedoui
hal.identifierhal-00608450
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00608450v1
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Optical%20Materials&rft.date=2010&rft.volume=33&rft.issue=2&rft.spage=220-226&rft.epage=220-226&rft.eissn=0925-3467&rft.issn=0925-3467&rft.au=NAZABAL,%20Virginie&JURDYC,%20Anne-Marie&NEMEC,%20P.&BRANDILY-ANNE,%20Marie-Laure&PETIT,%20La%C3%ABtitia&rft.genre=article


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