Stress and phase purity analyses of diamond films deposited through laser-assisted combustion synthesis
| hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
| hal.structure.identifier | Department of Electrical Engineering | |
| dc.contributor.author | GUILLEMET, Thomas | |
| hal.structure.identifier | Department of Electrical Engineering | |
| dc.contributor.author | XIE, Z. Q. | |
| hal.structure.identifier | Department of Electrical Engineering | |
| dc.contributor.author | ZHOU, Y. S. | |
| hal.structure.identifier | Department of Electrical Engineering | |
| dc.contributor.author | PARK, J. B. | |
| hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
| hal.structure.identifier | Department of Electrical Engineering | |
| dc.contributor.author | VEILLERE, Amélie | |
| hal.structure.identifier | Department of Electrical Engineering | |
| dc.contributor.author | XIONG, W. | |
| hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
| dc.contributor.author | HEINTZ, Jean-Marc | |
| hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
| dc.contributor.author | SILVAIN, Jean-François | |
| hal.structure.identifier | Department of Mechanical and Materials Engineering | |
| dc.contributor.author | CHANDRA, Namas | |
| hal.structure.identifier | Department of Electrical Engineering | |
| dc.contributor.author | LU, Y. F. | |
| dc.date.issued | 2011 | |
| dc.identifier.issn | 1944-8244 | |
| dc.description.abstractEn | Diamond films were deposited on silicon and tungsten carbide substrates in open air through laser-assisted combustion synthesis. Laser-induced resonant excitation of ethylene molecules was achieved in the combustion process to promote diamond growth rate. In addition to microstructure study by scanning electron microscopy, Raman spectroscopy was used to analyze the phase purity and residual stress of the diamond films. High-purity diamond films were obtained through laser-assisted combustion synthesis. The levels of residual stress were in agreement with corresponding thermal expansion coefficients of diamond, silicon, and tungsten carbide. Diamond-film purity increases while residual stress decreases with an increasing film thickness. Diamond films deposited on silicon substrates exhibit higher purity and lower residual stress than those deposited on tungsten carbide substrates. | |
| dc.language.iso | en | |
| dc.publisher | Washington, D.C. : American Chemical Society | |
| dc.subject.en | Diamond films | |
| dc.subject.en | Laser-assisted combustion synthesis | |
| dc.subject.en | Laser-induced resonant excitation | |
| dc.subject.en | Raman spectroscopy | |
| dc.subject.en | Residual stress | |
| dc.title.en | Stress and phase purity analyses of diamond films deposited through laser-assisted combustion synthesis | |
| dc.type | Article de revue | |
| dc.identifier.doi | 10.1021/am201010h | |
| dc.subject.hal | Chimie/Matériaux | |
| bordeaux.journal | ACS Applied Materials & Interfaces | |
| bordeaux.page | 4120-4125 | |
| bordeaux.volume | 3 | |
| bordeaux.issue | 10 | |
| bordeaux.peerReviewed | oui | |
| hal.identifier | hal-00641705 | |
| hal.version | 1 | |
| hal.popular | non | |
| hal.audience | Internationale | |
| hal.origin.link | https://hal.archives-ouvertes.fr//hal-00641705v1 | |
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