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hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorRENY, Edouard
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorCROS, Christian
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorPOUCHARD, Michel
hal.structure.identifierDepartment of Applied Chemistry [Faculty of Engineering, Hiroshima University]
dc.contributor.authorYAMANAKA, S.
dc.date.issued2002
dc.identifier.issn0953-8984
dc.description.abstractEnSince their discovery in 1965, various compositions of clathrate phases of silicon have been investigated and have revealed a direct correlation between the doping element and their properties. The recent development of a new synthesis technique using high-pressure and high-temperature (HPHT) conditions allows the synthesis of peculiar clathrate compositions which can show fascinating properties, such as Ba8Si46 which is a sp3 silicon-based structure with superconducting characteristics. This work reports the synthesis of the first binary silicon clathrate doped with an electronegative element and prepared using HPHT: I8Si46 −xIx. Some chemical and structural results are also presented.
dc.language.isoen
dc.publisherIOP Publishing
dc.subject.enHigh pressure
dc.subject.enSolid
dc.subject.enSilcon
dc.subject.enClathrates
dc.title.enHigh-pressure synthesis at the origin of new developments in silicon clathrate physical chemistry
dc.typeArticle de revue
dc.identifier.doi10.1088/0953-8984/14/44/459
dc.subject.halChimie/Matériaux
bordeaux.journalJournal of Physics: Condensed Matter
bordeaux.page11233-11236
bordeaux.volume14
bordeaux.issue44
bordeaux.peerReviewedoui
hal.identifierhal-00816971
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00816971v1
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