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dc.rights.licenseopenen_US
dc.contributor.authorSCOGNAMILLO, Ciro
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorFREGONESE, Sebastien
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorZIMMER, Thomas
IDREF: 076632598
dc.contributor.authorDAALESSANDRO, Vincenzo
dc.contributor.authorCATALANO, Antonio Pio
dc.date.accessioned2022-07-11T09:15:00Z
dc.date.available2022-07-11T09:15:00Z
dc.date.issued2022-10
dc.identifier.issn0885-8993en_US
dc.identifier.urioai:crossref.org:10.1109/tpel.2022.3174617
dc.identifier.urihttps://oskar-bordeaux.fr/handle/20.500.12278/140422
dc.description.abstractEnIn this letter, an innovative technique is presented, which allows the experimental extraction of the junction-to-ambient thermal impedance (ZTH) of power devices operating in their application environment (in situ). The technique draws inspiration from the thermal characterization of RF transistors, and is based on simple measurements of electrical signals, while not requiring a thermochuck, the calibration of a thermometer, as well as temperature sensors or IR cameras. The validation of the technique is unambiguously performed by applying the “simulated experiments” strategy on an SiC-based multichip power module.
dc.language.isoENen_US
dc.sourcecrossref
dc.subject.enElectrothermal (ET) simulation
dc.subject.enfinite-element method simulation
dc.subject.enin-situ thermal characterization
dc.subject.enpower devices
dc.subject.enthermal impedance (Z $_{\mathrm {TH}}$ ) measurement
dc.title.enA Technique for the In-Situ Experimental Extraction of the Thermal Impedance of Power Devices
dc.typeArticle de revueen_US
dc.identifier.doi10.1109/tpel.2022.3174617en_US
dc.subject.halSciences de l'ingénieur [physics]/Automatique / Robotiqueen_US
bordeaux.journalIEEE Transactions on Power Electronicsen_US
bordeaux.page11511-11515en_US
bordeaux.volume37en_US
bordeaux.hal.laboratoriesLaboratoire d’Intégration du Matériau au Système (IMS) - UMR 5218en_US
bordeaux.issue10en_US
bordeaux.institutionUniversité de Bordeauxen_US
bordeaux.institutionBordeaux INPen_US
bordeaux.institutionCNRSen_US
bordeaux.peerReviewedouien_US
bordeaux.inpressnonen_US
bordeaux.import.sourcedissemin
hal.exportfalse
workflow.import.sourcedissemin
dc.rights.ccPas de Licence CCen_US
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=IEEE%20Transactions%20on%20Power%20Electronics&rft.date=2022-10&rft.volume=37&rft.issue=10&rft.spage=11511-11515&rft.epage=11511-11515&rft.eissn=0885-8993&rft.issn=0885-8993&rft.au=SCOGNAMILLO,%20Ciro&FREGONESE,%20Sebastien&ZIMMER,%20Thomas&DAALESSANDRO,%20Vincenzo&CATALANO,%20Antonio%20Pio&rft.genre=article


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