2D Model for moisture diffusion in integrated Low-k dielectrics
Language
EN
Communication dans un congrès avec actes
This item was published in
2022 23rd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2022-04-25, St Julian. 2022p. 1-6
IEEE
English Abstract
This work presents a study of moisture diffusion inside integrated circuits. The targeted materials are low-k and SiCN dielectrics. Moisture diffusion in these two materials is studied through mass variations. In an ...Read more >
This work presents a study of moisture diffusion inside integrated circuits. The targeted materials are low-k and SiCN dielectrics. Moisture diffusion in these two materials is studied through mass variations. In an integrated configuration, moisture penetration is monitored by capacitance variations. A 2D numerical simulation approach is presented to model the capacitance results using the bulk material properties as inputs.Read less <
English Keywords
Micromechanical devices
Moisture
Capacitance
Numerical simulation
Numerical models
Dielectrics
Microelectronics