Show simple item record

dc.rights.licenseopenen_US
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorROCHE, Gilles
hal.structure.identifierCarinthian Tech Research [CTR]
dc.contributor.authorBRUCKNER, Gudrun
dc.contributor.authorDUMITRESCU, Dan
dc.contributor.authorMOREAU, Joël
dc.contributor.authorVAN DER LEE, Arie
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorWANTZ, Guillaume
dc.contributor.authorDAUTEL, O.J.
dc.date.accessioned2022-07-08T09:03:41Z
dc.date.available2022-07-08T09:03:41Z
dc.date.created2021-07
dc.date.issued2021-09
dc.identifier.issn2199-160Xen_US
dc.identifier.urihttps://oskar-bordeaux.fr/handle/20.500.12278/140405
dc.description.abstractEnThe synthesis and characterization of a series of [1]benzothieno[3,2-b][1]benzothiophene (BTBT) molecules disubstituted by hydroxy aliphatic chains in positions 2 and 7 (BTBT-CnOH), where the intralayer molecular stacking alternates between a classical and an inverted herringbone mode as a function of whether the alkyl sides chains have an even or an odd number of carbon atoms are reported. This odd–even effect does not only affect the interlayer distance of the lamellar structures and the melting points, but also the electronic properties. The BTBT-CnOH odd series develops a classical herringbone pattern with edge-to-edge S⋯S interaction chains linked together by face-to-edge S⋯S interaction chains with 2D mobility. However, the even series has only edge-to-edge interactions in an inverted herringbone organization and thus only a 1D conducting character. These two types of herringbone patterns have different field effect transistor characteristics and mobilities, those of the odd members being systematically higher than their even neighbors. This is the first example of an odd–even effect impacting the electronic properties of an organic semiconductor.
dc.description.sponsorshipModules solaires photovoltaïques organiques de grande surface à hauts rendements stabilisés - ANR-13-PRGE-0006en_US
dc.language.isoENen_US
dc.subject.enSupramolecular architectures
dc.subject.enOdd-even effect
dc.subject.enOFETs
dc.subject.enBTBT
dc.title.enStructural Odd–Even Effect Impacting the Dimensionality of Transport in BTBT‐CnOH Organic Field Effect Transistors
dc.typeArticle de revueen_US
dc.identifier.doi10.1002/aelm.202100265en_US
dc.subject.halChimie/Chimie organiqueen_US
dc.subject.halChimie/Matériauxen_US
dc.subject.halChimie/Chimie théorique et/ou physiqueen_US
bordeaux.journalAdvanced Electronic Materialsen_US
bordeaux.page2100265en_US
bordeaux.hal.laboratoriesLaboratoire d’Intégration du Matériau au Système (IMS) - UMR 5218en_US
bordeaux.institutionUniversité de Bordeauxen_US
bordeaux.institutionBordeaux INPen_US
bordeaux.institutionCNRSen_US
bordeaux.peerReviewedouien_US
bordeaux.inpressnonen_US
bordeaux.import.sourcehal
hal.identifierhal-03388528
hal.version1
hal.exportfalse
workflow.import.sourcehal
dc.rights.ccPas de Licence CCen_US
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Advanced%20Electronic%20Materials&rft.date=2021-09&rft.spage=2100265&rft.epage=2100265&rft.eissn=2199-160X&rft.issn=2199-160X&rft.au=ROCHE,%20Gilles&BRUCKNER,%20Gudrun&DUMITRESCU,%20Dan&MOREAU,%20Jo%C3%ABl&VAN%20DER%20LEE,%20Arie&rft.genre=article


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record